UnitedSiC|Transistors - JFETs - Page 1 - Fudong Communication (shenzhen) Group Co., Ltd.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Voltage-Breakdown(V(BR)GSS)	DraintoSourceVoltage(Vdss)	Current-Drain(Idss)@Vds(Vgs=0)	CurrentDrain(Id)-Max	Voltage-Cutoff(VGSoff)@Id	InputCapacitance(Ciss)(Max)@Vds	Resistance-RDS(On)	Power-Max	OperatingTemperature	MountingType
UJ3N120035K3S 1200V 35 MOHM SIC JFET, G3, N-ON UnitedSiC	2,010	-	RFQ	Datasheet	Tube	-	Active	N-Channel	1200 V	1200 V	-	63 A	-	2145pF @ 100V	45 mOhms	429 W	-55°C ~ 175°C (TJ)	Through Hole
UF3N170400B7S JFET 1700V SIC UnitedSiC	3,190	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	1.7 V	1.7 V	2.2 µA @ 1.7 V	6.8 A	-	225pF @ 100V	500 mOhms	68 W	-55°C ~ 175°C (TJ)	Surface Mount
UJ3N065080K3S 650V 80 MOHM SIC JFET, G3, N-ON UnitedSiC	2,750	-	RFQ	Datasheet	Tube	-	Active	N-Channel	650 V	650 V	-	32 A	-	630pF @ 100V	95 mOhms	190 W	-55°C ~ 175°C (TJ)	Through Hole
UJ3N120070K3S 1200V 70 MOHM SIC JFET, G3, N-ON UnitedSiC	2,625	-	RFQ	Datasheet	Tube	-	Active	N-Channel	1200 V	1200 V	-	33.5 A	-	985pF @ 100V	90 mOhms	254 W	-55°C ~ 175°C (TJ)	Through Hole
UJ3N065025K3S 650V 25 MOHM SIC JFET, G3, N-ON UnitedSiC	2,364	-	RFQ	Datasheet	Tube	-	Active	N-Channel	650 V	650 V	-	85 A	-	2360pF @ 100V	33 mOhms	441 W	-55°C ~ 175°C (TJ)	Through Hole
UJ3N120065K3S 1200V/65MOHM, SIC, N-ON JFET, G3 UnitedSiC	3,515	-	RFQ	Datasheet	Tube	-	Active	N-Channel	1.2 V	1.2 V	5 µA @ 1.2 V	34 A	-	1008pF @ 100V	55 mOhms	254 W	-55°C ~ 175°C (TJ)	Through Hole