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Diodes - Rectifiers - Arrays
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G3S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology Co. Ltd |
3,340 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 37A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S06540BSIC SCHOTTKY DIODE 650V 40A 3-PI Global Power Technology Co. Ltd |
2,752 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 60A (DC) | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S12004BSIC SCHOTTKY DIODE 1200V 4A 3-PI Global Power Technology Co. Ltd |
3,741 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 8.5A (DC) | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology Co. Ltd |
2,448 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.8A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G5S12040BSIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology Co. Ltd |
3,019 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 62A (DC) | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S12006BSIC SCHOTTKY DIODE 1200V 6A 3-PI Global Power Technology Co. Ltd |
3,749 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G4S06530BTSIC SCHOTTKY DIODE 650V 30A 3-PI Global Power Technology Co. Ltd |
3,687 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 39A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
|
|
G5S12016BMSIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology Co. Ltd |
3,190 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S17020BSIC SCHOTTKY DIODE 1700V 20A 3-P Global Power Technology Co. Ltd |
2,890 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1700 V | 24A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1700 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S12030BSIC SCHOTTKY DIODE 1200V 30A 3-P Global Power Technology Co. Ltd |
2,879 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 42A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S12010BSIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology Co. Ltd |
3,725 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 39A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G5S12030BMSIC SCHOTTKY DIODE 1200V 30A 3-P Global Power Technology Co. Ltd |
3,989 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 55A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G5S12040BMSIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology Co. Ltd |
2,771 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 62A (DC) | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S06504BSIC SCHOTTKY DIODE 650V 4A 3-PIN Global Power Technology Co. Ltd |
3,887 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 9A (DC) | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
|
BYQ28EB-100-E3/45DIODE ARRAY Vishay General Semiconductor - Diodes Division |
3,120 | - |
RFQ |
Bulk | * | Last Time Buy | - | - | - | - | - | - | - | - | - | - | |
|
|
UGB18BCT-E3/45DIODE Vishay General Semiconductor - Diodes Division |
3,940 | - |
RFQ |
Bulk | * | Last Time Buy | - | - | - | - | - | - | - | - | - | - | |
|
|
BYQ28EB-150-E3/45DIODE ARRAY Vishay General Semiconductor - Diodes Division |
2,340 | - |
RFQ |
Bulk | * | Last Time Buy | - | - | - | - | - | - | - | - | - | - | |
|
|
BYT28B-400-E3/45DIODE ARRAY Vishay General Semiconductor - Diodes Division |
3,880 | - |
RFQ |
Bulk | * | Last Time Buy | - | - | - | - | - | - | - | - | - | - | |
|
|
UGF8CT-E3/45DIODE ARRAY Vishay General Semiconductor - Diodes Division |
2,379 | - |
RFQ |
Bulk | * | Last Time Buy | - | - | - | - | - | - | - | - | - | - | |
|
|
UGF10CCT-E3/45DIODE ARRAY Vishay General Semiconductor - Diodes Division |
2,256 | - |
RFQ |
Bulk | * | Last Time Buy | - | - | - | - | - | - | - | - | - | - |
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