| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
TSDGLWHRVG1A 400V ESD CAPABILITY RECTIFIER Taiwan Semiconductor Corporation |
23,710 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | - |
|
|
CDBZC0130L-HFDIODE SCHOTTKY 30V 100MA 0201 Comchip Technology |
18,614 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 7 µA @ 10 V | 30 V | 100mA | -40°C ~ 125°C | 370 mV @ 10 mA |
|
DAN217FHT146DIODE SWITCHING 80V 0.3A 3-PIN. Rohm Semiconductor |
1,844 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 3.5pF @ 6V, 1MHz | 4 ns | 100 nA @ 70 V | 80 V | 100mA | 150°C (Max) | 1.2 V @ 100 mA | |
|
NTE5814HCR-SI 400V 10AMP NTE Electronics, Inc |
5,105 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 10A | -55°C ~ 125°C | 1 V @ 10 A | |
|
RAL1GDIODE FR DO-213AA 400V 1A Diotec Semiconductor |
2,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 3 µA @ 400 V | 400 V | 1A | -50°C ~ 175°C | 1.3 V @ 1 A | |
|
GL34MR13DIODE STD DO-213AA 1000V 0.5A Diotec Semiconductor |
10,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 1000 V | 1000 V | 500mA | -50°C ~ 175°C | 1.3 V @ 500 mA | |
|
|
RS1JFSHMWGDIODE Taiwan Semiconductor Corporation |
6,256 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
GS1J-LTPDIODE GEN PURP 600V 1A DO214AC Micro Commercial Co |
42,795 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
STPS2L30AFN30 V, 2 A LOW DROP POWER SCHOTTK STMicroelectronics |
621 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 2A | 150°C | 450 mV @ 2 A | |
|
NXPSC06650D6JDIODE SCHOTTKY 650V 6A DPAK WeEn Semiconductors |
7,474 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | |
|
BAV102DIODE GEN PURP 150V 200MA LL34 onsemi |
8,269 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 200mA | -65°C ~ 200°C | 1.25 V @ 200 mA | |
|
GL34MDIODE STD DO-213AA 1000V 0.5A Diotec Semiconductor |
2,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 1000 V | 1000 V | 500mA | -50°C ~ 175°C | 1.3 V @ 500 mA | |
|
|
RS1DLWHRVGDIODE GEN PURP 200V 1A SOD123W Taiwan Semiconductor Corporation |
4,911 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
GS1A-LTPDIODE GEN PURP 50V 1A DO214AC Micro Commercial Co |
12,765 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
RS3GB-T R5G150NS 3A 400V FAST RECOVERY RECT Taiwan Semiconductor Corporation |
1,650 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
MA2J11600LDIODE GEN PURP 40V 100MA SMINI2 Panasonic Electronic Components |
2,558 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 2pF @ 6V, 1MHz | 100 ns | 10 nA @ 40 V | 40 V | 100mA | 150°C (Max) | 1.2 V @ 100 mA | |
|
1N914TR_S00ZDIODE GEN PURP 100V 200MA DO35 onsemi |
2,731 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | -55°C ~ 175°C | 1 V @ 10 mA | |
|
UF3007-TDIODE GEN PURP 1KV 3A DO201AD Diodes Incorporated |
3,982 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 50pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 3A | -65°C ~ 150°C | 1.7 V @ 3 A | |
|
STTA812DIRGDIODE GEN PURP 1.2KV 8A TO220AC STMicroelectronics |
3,715 | - |
RFQ |
Datasheet |
Tube | TURBOSWITCH™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 100 µA @ 1200 V | 1200 V | 8A | 150°C (Max) | 2.2 V @ 8 A |
|
RB491D-TPDIODE SCHOTTKY 20V 1A SOT23 Micro Commercial Co |
2,632 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 1A | 125°C (Max) | 450 mV @ 1 A |