| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PR1003GL-TDIODE GEN PURP 200V 1A DO41 Diodes Incorporated |
3,541 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | ||
|
SBL1660DIODE SCHOTTKY 60V 16A TO220AC Diodes Incorporated |
2,531 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 60 V | 60 V | 16A | -65°C ~ 150°C | 750 mV @ 16 A | |
|
STTH1003SG-TRDIODE GEN PURP 300V 10A D2PAK STMicroelectronics |
2,030 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 300 V | 300 V | 10A | 175°C (Max) | 1.3 V @ 10 A | |
|
ES3B-13DIODE GEN PURP 100V 3A SMC Diodes Incorporated |
2,557 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 25 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
S3A-13DIODE GEN PURP 50V 3A SMC Diodes Incorporated |
2,695 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 1.15 V @ 3 A | |
|
ES2D-TPDIODE GEN PURP 200V 2A DO214AC Micro Commercial Co |
3,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 5 µA @ 200 V | 200 V | 2A | -50°C ~ 150°C | 975 mV @ 2 A | |
|
MA3J7440GLDIODE SCHOTTKY 30V 200MA SMINI3 Panasonic Electronic Components |
5,965 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | - | 3 ns | 50 µA @ 30 V | 30 V | 200mA | 150°C (Max) | 550 mV @ 200 mA | |
|
SK1H10SCHOTTKY SMA 100V 1A Diotec Semiconductor |
200,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4 µA @ 100 V | 100 V | 1A | -50°C ~ 175°C | 770 mV @ 1 A | |
|
FDLL3595DIODE GEN PURP 125V 200MA SOD80 onsemi |
6,563 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 8pF @ 0V, 1MHz | 3 µs | 1 nA @ 125 V | 125 V | 200mA | -65°C ~ 200°C | 1 V @ 200 mA | |
|
GP10MEHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,443 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
BYX10GP-E3/54DIODE GEN PURP 1.6KV 360MA DO204 Vishay General Semiconductor - Diodes Division |
1,114 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1600 V | 1600 V | 360mA | -65°C ~ 175°C | 1.6 V @ 2 A | |
|
KYZ35K6DIODE STD D12.77X6.6Z 600V 35A Diotec Semiconductor |
500 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 100 µA @ 600 V | 600 V | 35A | -50°C ~ 175°C | 1.1 V @ 35 A | |
|
GP10MHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,494 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
EGP10ARECTIFIER DIODE, 1A, 50V, DO-41 Rochester Electronics, LLC |
164,445 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 22pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A | |
|
GP10Q-E3/73DIODE GEN PURP 1.2KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,139 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1200 V | 1200 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A |
|
RF08L6STE25DIODE GEN PURP 600V 800MA PMDS Rohm Semiconductor |
3,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 70 ns | 10 µA @ 600 V | 600 V | 800mA | 150°C (Max) | 1.3 V @ 800 mA | |
|
GP10QHE3/73DIODE GEN PURP 1.2KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,215 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1200 V | 1200 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A |
|
US1M-AQDIODE UFR SMA 1000V 1A Diotec Semiconductor |
7,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -50°C ~ 150°C | 1.7 V @ 1 A | |
|
MBRH20035RLDIODE SCHOTTKY 35V 200A D-67 GeneSiC Semiconductor |
2,656 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Obsolete | Chassis Mount | - | - | 3 mA @ 200 V | 35 V | 200A | - | 600 mV @ 200 A | ||
|
UF4005 TRDIODE GEN PURP 600V 1A DO41 Central Semiconductor Corp |
4,885 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 150°C | 1.7 V @ 1 A |