| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAT54WH6327XTSA1DIODE SCHOTTKY 30V 200MA SOT323 Infineon Technologies |
363,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA | |
|
TVR06J-5700E3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
3,876 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
IDB09E60ATMA1DIODE GEN PURP 600V 19.3A TO263 Infineon Technologies |
3,933 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 50 µA @ 600 V | 600 V | 19.3A (DC) | -55°C ~ 175°C | 2 V @ 9 A | |
|
TVR06J-5700M3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
2,351 | - |
RFQ |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
IDB15E60DIODE GEN PURP 600V 29.2A TO263 Infineon Technologies |
2,127 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 87 ns | 50 µA @ 600 V | 600 V | 29.2A (DC) | -55°C ~ 175°C | 2 V @ 15 A | |
|
TVR10G-5700E3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
3,581 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
IDB18E120ATMA1DIODE GEN PURP 1.2KV 31A TO263-3 Infineon Technologies |
2,695 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 195 ns | 100 µA @ 1200 V | 1200 V | 31A (DC) | -55°C ~ 150°C | 2.15 V @ 18 A | |
|
TVR10G-5701E3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
3,523 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
IDB45E60ATMA1DIODE GEN PURP 600V 71A TO263-3 Infineon Technologies |
2,872 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 140 ns | 50 µA @ 600 V | 600 V | 71A (DC) | -55°C ~ 175°C | 2 V @ 45 A | |
|
TVR10G-5702E3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
3,792 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
IDD03E60BUMA1DIODE GEN PURP 600V 7.3A TO252-3 Infineon Technologies |
2,345 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 62 ns | 50 µA @ 600 V | 600 V | 7.3A (DC) | -55°C ~ 175°C | 2 V @ 3 A | |
|
1N3612GP-M3/54DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
2,350 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | Through Hole | - | - | - | - | - | - | - | ||
|
IDD06E60BUMA1DIODE GEN PURP 600V 14.7A TO252 Infineon Technologies |
2,715 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 70 ns | 50 µA @ 600 V | 600 V | 14.7A (DC) | -55°C ~ 175°C | 2 V @ 6 A | |
|
EGF1DDIODE GEN PURP 200V 1A SMA onsemi |
4,962 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
EGP10KDIODE GEN PURP 800V 1A DO204AL onsemi |
5,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 150°C | 1.7 V @ 1 A | |
|
1N4735AT9-ERECTIFIER DIODE Rochester Electronics, LLC |
10,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
BAS116HYT116LOW-LEAKAGE, 80V, 215MA, SOT-23, Rohm Semiconductor |
2,270 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 3 µs | 5 nA @ 75 V | 80 V | 215mA (DC) | 150°C | 1.25 V @ 150 mA | |
|
FE1DDIODE SFR DO-15 200V 1A Diotec Semiconductor |
4,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 2 µA @ 200 V | 200 V | 1A | -50°C ~ 175°C | 980 mV @ 1 A | |
|
CLLRH-02 BK TIN/LEADRECTIFIER-GENERAL PURPOSE Central Semiconductor Corp |
1,448 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | - | 200 nA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.1 V @ 500 mA | |
|
FFB10UP20STMDIODE GEN PURP 200V 10A D2PAK onsemi |
3,467 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 45 ns | 100 µA @ 200 V | 200 V | 10A | -65°C ~ 150°C | 1.15 V @ 10 A |