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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF27G R0GDIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation |
2,864 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
RB060LAM-40TFTRAUTOMOTIVE SCHOTTKY BARRIER DIOD Rohm Semiconductor |
2,987 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 2A | 150°C (Max) | - |
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|
NTSB30100S-1GDIODE SCHOTTKY 100V 30A I2PAK Rochester Electronics, LLC |
6,176 | - |
RFQ |
Datasheet |
Bulk,Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 950 mV @ 30 A | |
|
PMEG3015EV,115DIODE SCHOTTKY 30V 1.5A SOT666 Nexperia USA Inc. |
2,355 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 72pF @ 1V, 1MHz | - | 1 mA @ 30 V | 30 V | 1.5A (DC) | 150°C (Max) | 550 mV @ 1.5 A | |
|
|
SF27GHR0GDIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation |
2,210 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
BY1600DIODE STD DO-201 1600V 3A Diotec Semiconductor |
34,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 1600 V | 1600 V | 3A | -50°C ~ 150°C | 1.1 V @ 3 A | |
|
1N4937-TPDIODE GEN PURP 600V 1A DO41 Micro Commercial Co |
2,456 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
V1P6HM3/HDIODE SCHOTTKY 60V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
6,700 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 150 µA @ 60 V | 60 V | 1A | -40°C ~ 150°C | 600 mV @ 1 A |
|
SF31G R0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,651 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
HVD142AKRF-EPLANAR PIN DIODE FOR ANTENNA SWI Rochester Electronics, LLC |
48,000 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
ER1K-TPDIODE GEN PURP 800V 1A DO214AA Micro Commercial Co |
2,885 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 45pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -50°C ~ 150°C | 1.35 V @ 1 A | |
|
RR2L4SDDTE25DIODE GEN PURP 400V 2A PMDS Rohm Semiconductor |
1,030 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 2A | 150°C (Max) | 1.1 V @ 2 A |
|
|
ER1M-TPDIODE GEN PURP 1KV 1A DO214AA Micro Commercial Co |
3,473 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 45pF @ 4V, 1MHz | 100 ns | 5 µA @ 1000 V | 1000 V | 1A | -50°C ~ 150°C | 1.7 V @ 1 A | |
|
|
RF201LAM2STFTRRF201LAM2STF IS THE HIGH RELIABI Rohm Semiconductor |
2,744 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 2A | 150°C (Max) | 870 mV @ 2 A |
|
|
SF31GHR0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,712 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
RB058LAM-40TRDIODE SCHOTTKY 40V 3A PMDTM Rohm Semiconductor |
2,125 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 5 µA @ 40 V | 40 V | 3A | 150°C (Max) | 690 mV @ 3 A | |
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|
MUR1100-TPDIODE GEN PURP 1KV 1A DO41 Micro Commercial Co |
3,138 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.75 V @ 1 A | |
|
BAP70AM/A115BAP70AM - PIN DIODE Rochester Electronics, LLC |
3,613 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
SF32G R0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,555 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
MUR160-TPDIODE GEN PURP 600V 1A DO41 Micro Commercial Co |
2,363 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | 60 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.35 V @ 1 A |
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