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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-8TQ060-N3DIODE GEN PURP 60V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,058 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 50 µA @ 60 V | 60 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A | |
|
STPS2L25AFN25 V, 2 A LOW DROP POWER SCHOTTK STMicroelectronics |
3,031 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 90 µA @ 25 V | 25 V | 2A | 150°C | 450 mV @ 2 A | |
|
|
VS-8TQ100-N3DIODE SCHOTTKY 100V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,848 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 500pF @ 5V, 1MHz | - | 550 µA @ 100 V | 100 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A | |
|
PMEG45A10EPD139RECTIFIER DIODE, SCHOTTKY Rochester Electronics, LLC |
1,495,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
BAS40-07V,115NEXPERIA BAS40-07V - RECTIFIER D Rochester Electronics, LLC |
936,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
US2MHigh Efficiency SMB 1KV 2A NextGen Components |
835,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SMA | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
PMEG45A10EPDAZDIODE SCHOTTKY 45V 10A CFP15 Nexperia USA Inc. |
2,688 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 715pF @ 1V, 1MHz | 21 ns | 500 µA @ 45 V | 45 V | 10A | 150°C (Max) | 540 mV @ 10 A | |
|
MURD315T4RECTIFIER DIODE, 3A, 150V Rochester Electronics, LLC |
2,490 | - |
RFQ |
Datasheet |
Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 150 V | 100 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
CUHS15F30,H3FSBD SINGLE 30V, 1.5A, IN 2 PIN U Toshiba Semiconductor and Storage |
2,850 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 170pF @ 0V, 1MHz | - | 50 µA @ 30 V | 30 V | 1.5A | 150°C | 520 mV @ 1.5 A | ||
|
|
PMEG45A10EPD146RECTIFIER DIODE, SCHOTTKY Rochester Electronics, LLC |
414,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
BAT43X RSGDIODE SCHOTTKY 30V 200MA SOD523F Taiwan Semiconductor Corporation |
3,069 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | -55°C ~ 150°C | 1 V @ 200 mA | |
|
|
VS-HFA04TB60-N3DIODE GEN PURP 600V 4A TO220AC Vishay General Semiconductor - Diodes Division |
2,800 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A | |
|
BAT54AW RVGDIODE SCHOTTKY 30V 200MA SOT323 Taiwan Semiconductor Corporation |
2,793 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 1 V @ 100 mA | |
|
VS-HFA08TA60C-N3DIODE GEN PURP 600V 4A TO220AB Vishay General Semiconductor - Diodes Division |
3,567 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 155 ns | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A |
|
|
BAT54CW RVGDIODE SCHOTTKY 30V 200MA SOT323 Taiwan Semiconductor Corporation |
3,452 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 1 V @ 100 mA | |
|
|
VS-HFA15TB60-N3DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,563 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 15A | -55°C ~ 150°C | 1.7 V @ 15 A |
|
BAT54SW RVGDIODE SCHOTTKY 30V 200MA SOT323 Taiwan Semiconductor Corporation |
2,455 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 1 V @ 100 mA | |
|
|
VS-HFA16TB120-N3DIODE GEN PURP 1.2KV 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,589 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 20 µA @ 1200 V | 1200 V | 16A | -55°C ~ 150°C | 3 V @ 16 A |
|
BYV25X-600,127DIODE GEN PURP 600V 5A TO220FP WeEn Semiconductors |
2,758 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.3 V @ 5 A | |
|
DL4006-13-FDIODE GEN PURP 800V 1A MELF Diodes Incorporated |
3,043 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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