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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MURS460-E3/H4A 600V 50NS FSMC UF RECT SMD Vishay General Semiconductor - Diodes Division |
2,929 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 2.4A | -55°C ~ 175°C | 1.25 V @ 3 A | |
|
VS-18TQ045SHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
3,441 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 45 V | 45 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A |
|
GIB1401HE3_A/IDIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,684 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A |
|
|
VS-18TQ040STRLHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,497 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 40 V | 40 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A |
|
|
GIB1402HE3_A/IDIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,297 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A |
|
|
VS-18TQ040STRRHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,330 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 40 V | 40 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A |
|
|
GIB1403HE3_A/IDIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,718 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A |
|
31GF4-E3/73DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,367 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 20 µA @ 400 V | 400 V | 3A | -40°C ~ 150°C | 1.25 V @ 3 A | |
|
|
VS-18TQ035STRLHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,308 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 35 V | 35 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A |
|
BYT51G-TAPDIODE AVALANCHE 400V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,539 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
GIB1404HE3_A/IDIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,217 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A |
|
|
VS-18TQ035STRRHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
3,699 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 35 V | 35 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A |
|
|
VS-30ETH06STRR-M3DIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division |
3,085 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
|
|
BYT52D-TAPDIODE AVALANCHE 200V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,328 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 200 V | 200 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
|
GIB1401HE3_A/PDIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,384 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A |
|
VS-10ETS08FP-M3DIODE GEN PURP 800V 10A TO220-2 Vishay General Semiconductor - Diodes Division |
3,521 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
BYT53A-TAPDIODE AVALANCHE 50V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
3,456 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 50 V | 50 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
GIB1402HE3_A/PDIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,867 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A |
|
|
BYT54D-TAPDIODE AVALANCHE 200V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
3,535 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 200 V | 200 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
GIB1403HE3_A/PDIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,944 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A |
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