| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SS24LHRUGDIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation |
2,380 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
|
|
VS-20L15T-N3DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division |
2,174 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 2000pF @ 5V, 1MHz | - | 10 mA @ 15 V | 15 V | 20A | -55°C ~ 125°C | 410 mV @ 19 A | |
|
|
SS24LHRVGDIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation |
3,732 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
|
|
VS-20TQ035-N3DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division |
2,136 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 2.7 mA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
|
|
SS25L RUGDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
3,487 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
|
VS-20TQ035SPBFDIODE SCHOTTKY 20A D2PAK Vishay General Semiconductor - Diodes Division |
3,026 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
|
|
1N5624GPHE3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,488 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1 V @ 3 A |
|
BYD13GGP-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,707 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 400 V | 1A | -65°C ~ 175°C | - | |
|
VS-60EPU04PBFDIODE GEN PURP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,069 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 85 ns | 50 µA @ 400 V | 400 V | 60A | -55°C ~ 175°C | 1.25 V @ 60 A |
|
IDD04SG60CXTMA1DIODE SCHOTTKY 600V 5.6A TO252-3 Infineon Technologies |
2,226 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 80pF @ 1V, 1MHz | 0 ns | 25 µA @ 600 V | 600 V | 5.6A | -55°C ~ 175°C | 2.3 V @ 4 A |
|
MA2J72700LDIODE SCHOTTKY 50V 200MA SMINI2 Panasonic Electronic Components |
2,921 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 30pF @ 0V, 1MHz | 3 ns | 200 µA @ 50 V | 50 V | 200mA | 150°C (Max) | 550 mV @ 200 mA | |
|
RGP02-15EHE3/73DIODE GEN PURP 1.5KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
3,928 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 1500 V | 1500 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
|
BYD13GGPHE3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,876 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 5 µA @ 200 V | 400 V | 1A | -65°C ~ 175°C | - | |
|
VS-HFA06PB120PBFDIODE GEN PURP 1.2KV 6A TO247AC Vishay General Semiconductor - Diodes Division |
2,596 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 80 ns | 5 µA @ 1200 V | 1200 V | 6A | -55°C ~ 150°C | 3 V @ 6 A |
|
IDD05SG60CXTMA1DIODE SCHOTTKY 600V 5A TO252-3 Infineon Technologies |
2,352 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 110pF @ 1V, 1MHz | 0 ns | 30 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 2.3 V @ 5 A |
|
MA21D3800LDIODE SCHOTTKY 30V 1A SMINI2 Panasonic Electronic Components |
3,974 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 40pF @ 10V, 1MHz | 13 ns | 100 µA @ 30 V | 30 V | 1A | 125°C (Max) | 420 mV @ 1 A | |
|
RGP02-16EHE3/73DIODE GEN PURP 1.6KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
2,814 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 1600 V | 1600 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
|
BYD13JGP-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,146 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-HFA08PB120PBFDIODE GEN PURP 1.2KV 8A TO247AC Vishay General Semiconductor - Diodes Division |
2,287 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 10 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 3.3 V @ 8 A |
|
IDD06SG60CXTMA1DIODE SCHOTTKY 600V 6A TO252-3 Infineon Technologies |
2,999 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 50 µA @ 600 V | 600 V | 6A (DC) | -55°C ~ 175°C | 2.3 V @ 6 A |