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Diodes-Rectifiers-Single

Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
NTST40120CTH SCHOTTKY POWER RECTIFIER, DUAL, Rochester Electronics, LLC	177,300	-	RFQ	Datasheet	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
PMEG4020EP,115 NEXPERIA PMEG4020EP - RECTIFIER Rochester Electronics, LLC	27,416	-	RFQ	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	95pF @ 10V, 1MHz	-	100 µA @ 40 V	40 V	2A	150°C (Max)	490 mV @ 2 A
PMEG6010ESB,315 NOW NEXPERIA PMEG6010ESB RECTIFI Rochester Electronics, LLC	3,444	-	RFQ	Datasheet	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
V35PWM60HM3/I DIODE SCHOTTKY 60V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division	1,202	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	3340pF @ 4V, 1MHz	-	2.1 mA @ 60 V	60 V	35A	-40°C ~ 175°C	770 mV @ 35 A
WNSC6D06650Q SILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors	3,000	-	RFQ		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	327pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	6A	175°C	1.4 V @ 6 A
NTE6091 R-SCHOTTKY 40A 45V DUAL NTE Electronics, Inc	206	-	RFQ	Datasheet	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 mA @ 45 V	45 V	20A	-65°C ~ 250°C	550 mV @ 20 A
BY550-50-CT CUT-TAPE VERSION. STANDARD RECO DComponents	3,750	-	RFQ	Datasheet	Strip		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	5 µA @ 50 V	50 V	5A	-50°C ~ 175°C	1 V @ 5 A
S3M-F065 GENERAL PURPOSE RECTIFIER Rochester Electronics, LLC	27,000	-	RFQ	Datasheet	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
FDH400 RECTIFIER DIODE, 0.2A, 200V, DO- Rochester Electronics, LLC	10,000	-	RFQ	Datasheet	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	2pF @ 0V, 1MHz	50 ns	100 nA @ 150 V	150 V	200mA	175°C (Max)	1.1 V @ 300 mA
FES6G DIODE 200V 6A TO277-3 onsemi	4,250	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	25 ns	2 µA @ 400 V	400 V	6A	-55°C ~ 175°C	1.2 V @ 6 A
BYC30WT-600PQ DIODE GEN PURP 600V 30A TO247-3 WeEn Semiconductors	2,928	-	RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	22 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	2.75 V @ 30 A
SCS212AMC DIODE SCHOTTKY 650V 12A TO220FM Rohm Semiconductor	182	-	RFQ	Datasheet	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	438pF @ 1V, 1MHz	0 ns	240 µA @ 600 V	650 V	12A	175°C (Max)	1.55 V @ 12 A
PT800K ST Rect, 800V, 8A DComponents	15,400	-	RFQ	Datasheet	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 800 V	800 V	8A	-50°C ~ 150°C	1.1 V @ 8 A
PMEG2010EPASX NEXPERIA PMEG2010EPASX - RECTIFI Rochester Electronics, LLC	27,000	-	RFQ	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	175pF @ 1V, 1MHz	50 ns	335 µA @ 20 V	20 V	1A	150°C (Max)	375 mV @ 1 A
1N914T/R DIODE GEN PURP 75V 75MA DO35 EIC SEMICONDUCTOR INC.	10,000	-	RFQ	Datasheet	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	4pF @ 0V, 1MHz	4 ns	5 µA @ 75 V	75 V	75mA	-65°C ~ 175°C	1 V @ 10 mA
1N5627-TAP DIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division	1,493	-	RFQ	Datasheet	Cut Tape (CT),Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	60pF @ 4V, 1MHz	7.5 µs	1 µA @ 200 V	800 V	3A	-55°C ~ 175°C	1 V @ 3 A
RURG3020 30A, 200V ULTRAFAST DIODE Rochester Electronics, LLC	575	-	RFQ	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	50 ns	250 µA @ 200 V	200 V	30A	-65°C ~ 175°C	1 V @ 30 A
TRS12A65F,S1Q PB-F DIODE TO-220-2L V=650 IF=12 Toshiba Semiconductor and Storage	188	-	RFQ		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	44pF @ 650V, 1MHz	0 ns	60 µA @ 650 V	650 V	12A (DC)	175°C (Max)	1.6 V @ 12 A
PT800A ST Rect, 50V, 8A DComponents	2,000	-	RFQ	Datasheet	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 50 V	50 V	8A	-50°C ~ 150°C	1.1 V @ 8 A
PMEG2010EPASX NOW NEXPERIA PMEG2010EPASX - REC Rochester Electronics, LLC	15,000	-	RFQ	Datasheet	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	175pF @ 1V, 1MHz	50 ns	335 µA @ 20 V	20 V	1A	150°C (Max)	375 mV @ 1 A