| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S10JCHM6GDIODE GEN PURP 600V 10A DO214AB Taiwan Semiconductor Corporation |
3,601 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A |
|
|
1N5406GP-APDIODE GPP 3A DO-201AD Micro Commercial Co |
3,881 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | - | - | 600 V | 3A | -55°C ~ 150°C | - | |
|
S10KC M6GDIODE GEN PURP 800V 10A DO214AB Taiwan Semiconductor Corporation |
2,603 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
|
1N5407GP-APDIODE GPP 3A DO-201AD Micro Commercial Co |
3,370 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | - | - | 800 V | 3A | -55°C ~ 150°C | - | |
|
S10KCHM6GDIODE GEN PURP 800V 10A DO214AB Taiwan Semiconductor Corporation |
3,042 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A |
|
|
1N5408GP-APDIODE GPP 3A DO-201AD Micro Commercial Co |
3,099 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | - | - | 1000 V | 3A | -55°C ~ 150°C | - | |
|
40HF100DO5 40 AMP SILICON RECTFIER KK Solid State Inc. |
500 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 100 µA @ 1000 V | 1000 V | 40A | -65°C ~ 150°C | 1.3 V @ 40 A | |
|
NTE551R-SI 1.5KV 1A NTE Electronics, Inc |
3,075 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 µs | 10 µA @ 1500 V | 1500 V | 1.5A | -40°C ~ 125°C | 1.2 V @ 2 A | |
|
SBA340AL_R1_00001SOD-123FL, SKY Panjit International Inc. |
2,204 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 480 mV @ 3 A | |
|
1N5402Std Rect, 200V, 3A DComponents |
1,445 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 200 V | 200 V | 3A | -50°C ~ 175°C | 1.2 V @ 3 A | |
|
IDW50E60IDW50E60 - SILICON POWER DIODE Rochester Electronics, LLC |
960 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
40HF120DO5 40 AMP SILICON RECTFIER KK Solid State Inc. |
500 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 100 µA @ 1200 V | 1200 V | 40A | -65°C ~ 150°C | 1.3 V @ 40 A | |
|
SCS215AJTLLDIODE SCHOTTKY 650V 15A TO263AB Rohm Semiconductor |
7,692 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 550pF @ 1V, 1MHz | 0 ns | 300 µA @ 600 V | 650 V | 15A | 175°C (Max) | 1.55 V @ 15 A | |
|
MB320_R1_00001SMC, SKY Panjit International Inc. |
2,418 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 140pF @ 4V, 1MHz | - | 50 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 900 mV @ 3 A | |
|
EAL1BSF Rect, 100V, 1.00A, 50ns DComponents |
2,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 50 ns | 3 µA @ 100 V | 100 V | 1A | -50°C ~ 175°C | 1.25 V @ 1 A | |
|
P2000KST Rect, 800V, 20A DComponents |
1,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 800 V | 800 V | 20A | -50°C ~ 150°C | 1.1 V @ 20 A | |
|
40HFR40DO5 40 AMP SILICON RECTFIER AK Solid State Inc. |
490 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 100 µA @ 400 V | 400 V | 40A | -65°C ~ 150°C | 1.3 V @ 40 A | |
|
SCS206AMCDIODE SCHOTTKY 650V 6A TO220FM Rohm Semiconductor |
5,754 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 219pF @ 1V, 1MHz | 0 ns | 120 µA @ 600 V | 650 V | 6A | 175°C (Max) | 1.55 V @ 6 A | |
|
BAT6402VH6327XTSA1DIODE SCHOTTKY 40V 250MA SC79-2 Infineon Technologies |
899 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 6pF @ 0V, 1MHz | 5 ns | 2 µA @ 30 V | 40 V | 250mA (DC) | 150°C (Max) | 750 mV @ 100 mA | |
|
FE2GSF Rect, 400V, 2.00A, 50ns DComponents |
16,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 2 µA @ 400 V | 400 V | 2A | -50°C ~ 175°C | 1.3 V @ 2 A |