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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HER301G A0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,411 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
VS-96-1050-N3DIODE GP 90A TO247 Vishay General Semiconductor - Diodes Division |
2,309 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
HER302G A0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,312 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
VS-E4PH6006L-N-S1DIODE 60A 600V TO220AD-2 Vishay General Semiconductor - Diodes Division |
3,632 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
HER303G A0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
2,225 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
VS-80-1320PBFDIODE GP 80A TO247 Vishay General Semiconductor - Diodes Division |
2,227 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
HER304G A0GDIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation |
2,462 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
VS-S1558DIODE GEN PURP TO214 Vishay General Semiconductor - Diodes Division |
3,631 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
HER306G A0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
2,766 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
VS-80-1320-M3DIODE GP 80A TO247 Vishay General Semiconductor - Diodes Division |
2,938 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
HER307G A0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
2,391 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
VS-E4PU6006L-N-S1DIODE 60A 600V TO247AD-2 Vishay General Semiconductor - Diodes Division |
3,140 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
HER601G A0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
2,526 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
IDP45E60XKSA2IC IDP45E60 TO220-2 Infineon Technologies |
3,213 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
HER602G A0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
2,486 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
SIDC88D65DC8AX7SA2DIODE GENERAL PURPOSE 650V Infineon Technologies |
2,791 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
HER603G A0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
2,498 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
SIDC14D60E6X7SA1DIODE SWITCHING 600V WAFER Infineon Technologies |
2,117 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -55°C ~ 150°C | 1.25 V @ 30 A | ||
|
|
HER604G A0GDIODE GEN PURP 300V 6A R-6 Taiwan Semiconductor Corporation |
3,089 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
SIDC08D60C8X1SA3DIODE GEN PURP 600V 30A WAFER Infineon Technologies |
3,093 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -40°C ~ 175°C | 1.95 V @ 30 A |
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