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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF2L4GHA0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,431 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
SIDC07D60F6X1SA1DIODE SWITCHING 600V WAFER Infineon Technologies |
2,361 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 22.5A (DC) | -40°C ~ 175°C | 1.6 V @ 22.5 A | |
|
|
SF2L6G A0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
2,515 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SIDC03D60C8X1SA2DIODE SWITCHING 600V 10A WAFER Infineon Technologies |
3,490 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 10A (DC) | -40°C ~ 175°C | 1.95 V @ 10 A | |
|
|
SF2L6GHA0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
3,904 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
|
SIDC14D60F6X1SA1DIODE SWITCHING 600V WAFER Infineon Technologies |
3,053 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 45A (DC) | -40°C ~ 175°C | 1.6 V @ 45 A | |
|
|
SF2L8G A0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
3,550 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
SIDC03D60C8F1SA1DIODE SWITCHING 600V 10A WAFER Infineon Technologies |
2,594 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 10A (DC) | -40°C ~ 175°C | 1.95 V @ 10 A | ||
|
|
SF2L8GHA0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,320 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
|
SIDC14D60C8X1SA2DIODE GEN PURP 600V 50A WAFER Infineon Technologies |
3,817 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 50A (DC) | -40°C ~ 175°C | 1.9 V @ 50 A | |
|
SF31G A0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,125 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
SB120A-01DIODE SCHOTTKY DO41 Diodes Incorporated |
3,175 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
SF31GHA0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,501 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
DFLS130L-7-GDIODE SCHOTTKY Diodes Incorporated |
3,978 | - |
RFQ |
Strip | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 76pF @ 10V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -40°C ~ 125°C | 310 mV @ 1 A | ||
|
|
SF32G A0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,387 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
SB140A-01DIODE SCHOTTKY DO41 Diodes Incorporated |
3,003 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
SF32GHA0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,853 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
|
|
SB190A-01DIODE SCHOTTKY DO41 Diodes Incorporated |
3,258 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
SF33G A0GDIODE GEN PURP 150V 3A DO201AD Taiwan Semiconductor Corporation |
3,730 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
1N5819A-01DIODE SCHOTTKY DO41 Diodes Incorporated |
2,874 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - |
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