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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRS3100T3HDIODE SCHOTTKY onsemi |
3,695 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 50 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 900 mV @ 6 A | ||
|
|
MBRS340T3HDIODE SCHOTTKY Rochester Electronics, LLC |
2,985 | - |
RFQ |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 40 V | 40 V | 4A | -65°C ~ 150°C | 500 mV @ 3 A | ||
|
|
MBRS360T3HDIODE SCHOTTKY Rochester Electronics, LLC |
3,841 | - |
RFQ |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 30 µA @ 60 V | 60 V | 4A | -65°C ~ 175°C | 630 mV @ 3 A | ||
|
MUR1510HDIODE GEN PURPOSE onsemi |
2,249 | - |
RFQ |
Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A | |
|
|
MUR1560HDIODE GEN PURPOSE Rochester Electronics, LLC |
6,122 | - |
RFQ |
Tray,Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.5 V @ 15 A | |
|
MUR460RLHDIODE GEN PURPOSE Rochester Electronics, LLC |
3,721 | - |
RFQ |
Tray,Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A | |
|
|
MUR8100EHDIODE GEN PURPOSE onsemi |
3,858 | - |
RFQ |
Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 25 µA @ 1000 V | 1000 V | 8A | -65°C ~ 175°C | 1.8 V @ 8 A | |
|
|
MUR820HDIODE GEN PURPOSE onsemi |
2,127 | - |
RFQ |
Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 175°C | 975 mV @ 8 A | |
|
|
MUR840HDIODE GEN PURPOSE onsemi |
3,059 | - |
RFQ |
Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A | |
|
|
MUR860HDIODE GEN PURPOSE Rochester Electronics, LLC |
1,850 | - |
RFQ |
Tray,Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.5 V @ 8 A | |
|
MURA120T3HDIODE GEN PURPOSE onsemi |
2,916 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 875 mV @ 1 A | ||
|
|
MURA160T3HDIODE GEN PURPOSE Rochester Electronics, LLC |
8,779 | - |
RFQ |
Tray,Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A | ||
|
MURF860HDIODE GEN PURPOSE onsemi |
3,405 | - |
RFQ |
Tray | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.5 V @ 8 A | |
|
MURS120T3HDIODE GEN PURPOSE onsemi |
2,275 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 875 mV @ 1 A | ||
|
|
MURS140T3HDIODE GEN PURPOSE onsemi |
3,159 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A | ||
|
|
MURS160T3HDIODE GEN PURPOSE onsemi |
2,969 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A | ||
|
|
MURS320T3HDIODE GEN PURPOSE onsemi |
3,371 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A | ||
|
|
MURS360T3HDIODE GEN PURPOSE Rochester Electronics, LLC |
3,947 | - |
RFQ |
Tray,Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A | ||
|
|
SS24T3HDIODE SCHOTTKY onsemi |
3,621 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | ||
|
|
SS26T3HDIODE SCHOTTKY onsemi |
2,266 | - |
RFQ |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 630 mV @ 2 A |
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