| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ESH1DHE3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,316 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
|
MR856GDIODE GEN PURP 600V 3A DO201AD Rochester Electronics, LLC |
181,110 | - |
RFQ |
Datasheet |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 10 µA @ 600 V | 600 V | 3A | -65°C ~ 125°C | 1.25 V @ 3 A | |
|
SS2P4-E3/85ADIODE SCHOTTKY 40V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,975 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 150 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
VSS8D5M15-M3/I5A, 150V, SLIMSMAW TRENCH SKY Vishay General Semiconductor - Diodes Division |
10,639 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 300pF @ 4V, 1MHz | - | 180 µA @ 150 V | 150 V | 2A | -40°C ~ 175°C | 790 mV @ 2.5 A |
|
P2500KDIODE STD D8X7.5 800V 25A Diotec Semiconductor |
1,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 800 V | 800 V | 25A | -50°C ~ 175°C | 1.1 V @ 25 A | |
|
NTE5895R-100PRV 16A ANODE CASE NTE Electronics, Inc |
2,252 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 12 mA @ 100 V | 100 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | |
|
|
VS-6TQ045-M3DIODE SCHOTTKY 45V 6A TO-220 Vishay General Semiconductor - Diodes Division |
830 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 400pF @ 5V, 1MHz | - | 800 µA @ 45 V | 45 V | 6A | -55°C ~ 175°C | 730 mV @ 12 A | |
|
FFSD0665B650V 6A SIC SBD GEN1.5 onsemi |
2,230 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 259pF @ 1V, 100kHz | 0 ns | 40 µA @ 650 V | 650 V | 9.1A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A | |
|
NTE5810R-1200V 12A DO4 KK NTE Electronics, Inc |
3,402 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 12 mA @ 1200 V | 1200 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
GP08GHE3/54DIODE GEN PURP 400V 800MA DO204 Vishay General Semiconductor - Diodes Division |
2,926 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 5 µA @ 400 V | 400 V | 800mA | -65°C ~ 175°C | 1.3 V @ 800 mA |
|
RS3GHE3/57TDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,703 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
CDBP0130R-GDIODE SCHOTTKY 30V 100MA SOD723 Comchip Technology |
3,740 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | - | - | 500 nA @ 10 V | 30 V | 100mA | 125°C (Max) | 450 mV @ 10 mA | |
|
ESH1PAHE3/84ADIODE GEN PURP 50V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,589 | - |
RFQ |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 25 ns | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
MRA4005T1DIODE GEN PURP 600V 1A SMA onsemi |
2,724 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
SS2P4HE3/85ADIODE SCHOTTKY 40V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,856 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q100, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 150 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
GP08JHE3/54DIODE GEN PURP 600V 800MA DO204 Vishay General Semiconductor - Diodes Division |
2,108 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 5 µA @ 600 V | 600 V | 800mA | -65°C ~ 175°C | 1.3 V @ 800 mA |
|
RS3JHE3/57TDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,970 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 34pF @ 4V, 1MHz | 250 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
CEFA103-GDIODE GEN PURP 200V 1A DO214AC Comchip Technology |
3,528 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 25 ns | 5 µA @ 200 V | 200 V | 1A | 150°C (Max) | 920 mV @ 1 A | |
|
ESH1PBHE3/84ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,729 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
MUR105RLDIODE GEN PURP 50V 1A AXIAL onsemi |
10,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 2 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A |