| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N6857-1/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,100 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/444 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Through Hole | 4.5pF @ 0V, 1MHz | - | 150 nA @ 16 V | 16 V | 150mA | -65°C ~ 150°C | 750 mV @ 35 mA | |
|
S1BHE3/61TDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,470 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 1.8 µs | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
CEFA203-GDIODE GEN PURP 200V 2A DO214AC Comchip Technology |
2,025 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 25 ns | 5 µA @ 200 V | 200 V | 2A | 150°C (Max) | 920 mV @ 2 A | |
|
ESH2CHE3/52TDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,715 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
|
MUR140DIODE GEN PURP 400V 1A AXIAL Rochester Electronics, LLC |
7,179 | - |
RFQ |
Datasheet |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
SS2PH10-E3/85ADIODE SCHOTTKY 100V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,501 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 65pF @ 4V, 1MHz | - | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A |
|
GP10G-4004EHE3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,358 | - |
RFQ |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 400 V | 1A | - | - | |
|
S1DA-E3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,288 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8pF @ 4V, 1MHz | 1 µs | 3 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
CEFB103-GDIODE GEN PURP 200V 1A DO214AA Comchip Technology |
3,364 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 25 ns | 5 µA @ 200 V | 200 V | 1A | 150°C (Max) | 875 mV @ 1 A | |
|
MUR1510DIODE GEN PURP 100V 15A TO220-2 Rochester Electronics, LLC |
735 | - |
RFQ |
Datasheet |
Tube,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
SS2PH10HE3/85ADIODE SCHOTTKY 100V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,959 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q100, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 65pF @ 4V, 1MHz | - | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A |
|
GP10G-4004HE3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,703 | - |
RFQ |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 400 V | 1A | - | - | |
|
S1DHE3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,637 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
CEFB104-GDIODE GEN PURP 400V 1A DO214AA Comchip Technology |
2,077 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 5 µA @ 400 V | 400 V | 1A | 150°C (Max) | 1.1 V @ 1 A | |
|
MUR1515DIODE GEN PURP 150V 15A TO220-2 onsemi |
2,473 | - |
RFQ |
Datasheet |
Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 150 V | 150 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
SS2PH9-E3/85ADIODE SCHOTTKY 90V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,133 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 65pF @ 4V, 1MHz | - | 1 µA @ 90 V | 90 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A |
|
GP10J-4005EHE3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,249 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 600 V | 1A | - | - | ||
|
S1GA-E3/61TDIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,843 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8pF @ 4V, 1MHz | 1 µs | 3 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
CEFB105-GDIODE GEN PURP 600V 1A DO214AA Comchip Technology |
3,471 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 5 µA @ 600 V | 600 V | 1A | 150°C (Max) | 1.25 V @ 1 A | |
|
MUR180ERLDIODE GEN PURP 800V 1A AXIAL onsemi |
5,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.75 V @ 1 A |