| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP10AHE3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,522 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
S1PAHE3/84ADIODE GEN PURP 50V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,625 | - |
RFQ |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.8 µs | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
VS-60EPF12PBFDIODE GEN PURP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,560 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 480 ns | 100 µA @ 1200 V | 1200 V | 60A | -40°C ~ 150°C | 1.4 V @ 60 A | ||
|
DSA75-16BDIODE AVALANCHE 1.6KV 110A DO203 IXYS |
2,924 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Obsolete | Chassis, Stud Mount | - | - | 6 mA @ 1600 V | 1600 V | 110A | -40°C ~ 180°C | 1.17 V @ 150 A | |
|
MUR220DIODE GEN PURP 200V 2A AXIAL onsemi |
2,941 | - |
RFQ |
Datasheet |
Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A |
|
NTE507DIODE GEN PURP 50V 1A DO41 NTE Electronics, Inc |
3,355 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
NTE5995R-600 PRV 40A ANODE CASE NTE Electronics, Inc |
2,572 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 9 mA @ 600 V | 600 V | 40A | -65°C ~ 190°C | 1.3 V @ 40 A | |
|
|
STPS20SM120STDIODE SCHOTTKY 120V 20A TO220AB STMicroelectronics |
706 | - |
RFQ |
Datasheet |
Tube | ECOPACK®2 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 210 µA @ 120 V | 120 V | 20A | 150°C (Max) | 890 mV @ 20 A |
|
FFSD0865B650V 8A SIC SBD GEN1.5 onsemi |
2,487 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 336pF @ 1V, 100kHz | 0 ns | 40 µA @ 650 V | 650 V | 11.6A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | |
|
NTE6035R-400 PRV 60A ANODE CASE NTE Electronics, Inc |
2,088 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 mA @ 320 V | 320 V | 60A | -65°C ~ 175°C | 1.4 V @ 60 A | |
|
UF5408R-1000V 3A ULTRA FAST NTE Electronics, Inc |
190 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 36pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 3A | - | 1.7 V @ 3 A | |
|
NTE5825R-1000V 12A FAST RECOVERY NTE Electronics, Inc |
2,829 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 400 ns | 25 µA @ 1000 V | 1000 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
1N4153-1DIODE GEN PURP 50V 150MA DO35 Microchip Technology |
939 | - |
RFQ |
Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 4 ns | 50 nA @ 50 V | 50 V | 150mA | -65°C ~ 175°C | 880 mV @ 20 mA | |
|
STPSC8H065DLFSILICON CARBIDE DIODES STMicroelectronics |
2,143 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 460pF @ 0V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | 1.55 V @ 8 A |
|
NTE5933R-1000PRV 20A ANODE CASE NTE Electronics, Inc |
3,342 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 12 mA @ 1000 V | 1000 V | 20A | -65°C ~ 175°C | 1.23 V @ 63 A | |
|
1N270DIODE-GE 100V 40MA DO-7 NTE Electronics, Inc |
787 | - |
RFQ |
Datasheet |
Bag | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 0.8pF @ 1V, 1MHz | - | 100 µA @ 50 V | 100 V | 40mA | -65°C ~ 90°C | 1 V @ 200 mA | |
|
NTE5878R-400PRV 12A CATH CASE NTE Electronics, Inc |
2,932 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 12 mA @ 400 V | 400 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
VS-E4TU2006FP-N3DIODE GEN PURP 600V 20A TO220-2 Vishay General Semiconductor - Diodes Division |
761 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 61 ns | 15 µA @ 600 V | 600 V | 20A | -55°C ~ 175°C | 1.63 V @ 20 A |
|
SDUR30Q60600V30AUFRPACKAGE TO-220AC SMC Diode Solutions |
2,000 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 10 µA @ 600 V | 600 V | 30A | -55°C ~ 150°C | 1.8 V @ 30 A | |
|
S3D10065GTRDIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions |
500 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 621pF @ 0V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 10A | -55°C ~ 175°C | 1.7 V @ 10 A |