| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS8P2L-E3/86ADIODE SCHOTTKY 20V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,004 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 330pF @ 4V, 1MHz | - | 200 µA @ 30 V | 20 V | 8A | -55°C ~ 150°C | 570 mV @ 8 A |
|
|
MUR440RLDIODE GEN PURP 400V 4A DO201AD onsemi |
2,131 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 400 V | 400 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A |
|
SS3P6-E3/85ADIODE SCHOTTKY 60V 3A DO220AA Vishay General Semiconductor - Diodes Division |
2,646 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 780 mV @ 3 A |
|
GP10KHE3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,836 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
S3JHE3/57TDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,240 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
AR3PDHM3/87ADIODE AVALANCHE 200V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,694 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 44pF @ 4V, 1MHz | 140 ns | 10 µA @ 200 V | 200 V | 1.8A (DC) | -55°C ~ 175°C | 1.6 V @ 3 A |
|
SS8P3L-E3/86ADIODE SCHOTTKY 30V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,751 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 8A | -55°C ~ 150°C | 570 mV @ 8 A |
|
|
MUR450PFDIODE GEN PURP 520V 4A DO201AD onsemi |
3,672 | - |
RFQ |
Datasheet |
Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 5 µA @ 520 V | 520 V | 4A | -65°C ~ 175°C | 1.15 V @ 4 A |
|
SS3P6HE3/85ADIODE SCHOTTKY 60V 3A DO220AA Vishay General Semiconductor - Diodes Division |
2,107 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q100, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 780 mV @ 3 A |
|
S4D08120ETRDIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions |
245 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 560pF @ 0V, 1MHz | 0 ns | 15 µA @ 1200 V | 1200 V | 8A | -55°C ~ 175°C | 1.8 V @ 8 A | |
|
UGF1008G C0GDIODE GEN PURP 600V 10A ITO220AB Taiwan Semiconductor Corporation |
449 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
GP10MEHE3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,521 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
NTE5906R-1200V 40A DO5 KK NTE Electronics, Inc |
2,200 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 9 mA @ 1200 V | 1200 V | 40A | -65°C ~ 190°C | 1.3 V @ 40 A | |
|
VS-HFA15TB60-1-M3DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
821 | - |
RFQ |
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 15A (DC) | -55°C ~ 150°C | 2 V @ 30 A |
|
S3KHE3/57TDIODE GEN PURP 800V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,283 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
FERD30SM100DJFTRDIODE RECT 100V 30A POWERFLAT STMicroelectronics |
2,624 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | ECOPACK®2 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | FERD (Field Effect Rectifier Diode) | Active | Surface Mount | - | - | 150 µA @ 100 V | 100 V | 30A | 175°C (Max) | 970 mV @ 30 A |
|
SS5P4HM3_A/HDIODE SCHOTTKY 40V 5A TO277A Vishay General Semiconductor - Diodes Division |
477 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 520 mV @ 5 A |
|
DHG30I600HADIODE GEN PURP 600V 30A TO247 IXYS |
131 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -55°C ~ 150°C | 2.36 V @ 30 A | |
|
MURS860FA-BP8A/600V FRED RECTIFIERS,ITO-220A Micro Commercial Co |
971 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.6 V @ 8 A | |
|
MSC030SDA120BCTSIC SBD 1200 V 30 A TO-247 Microchip Technology |
2,119 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 141pF @ 400V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 65A (DC) | -55°C ~ 175°C | 1.8 V @ 30 A |