| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SA2LDIODE 1A 100V SOD-123F Rectron USA |
3,283 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
1N4001DIODE GEN PURP 1000V 1A DO-41 Rectron USA |
3,267 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 200 nA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
SA4DIODE 1A 400V SOD-123F Rectron USA |
2,487 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1 V @ 1 A |
|
1N4004DIODE GEN PURP 400V 1A DO41 onsemi |
3,065 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
1N5406GDIODE GP GLASS 600V 3A DO-201AD Rectron USA |
2,635 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 500 nA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 980 mV @ 3 A | |
|
1N4005WDIODE GEN 1A 600V SOD-123F Rectron USA |
3,713 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
MUR480ERLDIODE GEN PURP 800V 4A AXIAL onsemi |
2,555 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 25 µA @ 800 V | 800 V | 4A | -65°C ~ 175°C | 1.85 V @ 4 A |
|
1N5391DIODE GEN PURP 50V 1.5A DO-15 Rectron USA |
2,660 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
FM4006FDIODE GP GLASS 2A 800V SMAF Rectron USA |
2,161 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 1A | 150°C | 1 V @ 1 A | |
|
SS5P6HM3/87ADIODE SCHOTTKY 60V 5A TO277A Vishay General Semiconductor - Diodes Division |
3,580 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 200pF @ 4V, 1MHz | - | 150 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 690 mV @ 5 A |
|
FM301DIODE GP GLASS 3A 50V SMC Rectron USA |
2,825 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | - | 1 µA @ 50 V | 50 V | 3A | 150°C | 1 V @ 3 A |
|
GP10VHE3/54DIODE GEN PURP 1.4KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,237 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1400 V | 1400 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
|
SA7LDIODE 1A 1000V SOD-123F Rectron USA |
3,643 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
FM802PDIODE GP GLASS 8A 100V DO277 Rectron USA |
3,738 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 100 V | 100 V | 8A | 150°C | 1.1 V @ 8 A | |
|
S4PJHM3/86ADIODE GEN PURP 600V 4A TO277A Vishay General Semiconductor - Diodes Division |
2,442 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
|
AR3PKHM3/87ADIODE AVALANCHE 800V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
3,502 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 34pF @ 4V, 1MHz | 120 ns | 10 µA @ 800 V | 800 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
1N5818DIODE SCHOTTKY 30V 1A DO41 onsemi |
2,184 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 1A | -65°C ~ 125°C | 550 mV @ 1 A | |
|
|
MUR490EDIODE GEN PURP 900V 4A DO201AD Rochester Electronics, LLC |
2,415 | - |
RFQ |
Datasheet |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 25 µA @ 900 V | 900 V | 4A | -65°C ~ 175°C | 1.85 V @ 4 A |
|
SS8P2LHM3/87ADIODE SCHOTTKY 20V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,520 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 330pF @ 4V, 1MHz | - | 200 µA @ 30 V | 20 V | 8A | -55°C ~ 150°C | 570 mV @ 8 A |
|
GP10WHE3/54DIODE GEN PURP 1.5KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,356 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1500 V | 1500 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |