| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TVR10G-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,364 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | - | 400 V | 1A | -65°C ~ 175°C | - | ||
|
LSIC2SD120A10DIODE SCHOTTKY 1.2KV 28A TO220-2 Littelfuse Inc. |
383 | - |
RFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 582pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 28A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
1N60AD-GE 40PRV .005A NTE Electronics, Inc |
695 | - |
RFQ |
Datasheet |
Bag | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 65 µA @ 10 V | 30 V | 150mA (DC) | -65°C ~ 85°C | 1 V @ 5 mA | |
|
PEF20470HV1.1SWITI MTSI-L SWITCHING IC Rochester Electronics, LLC |
2,609 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
MBR10100-E3/4WDIODE SCHOTTKY 100V 10A TO220AC Vishay General Semiconductor - Diodes Division |
735 | - |
RFQ |
Datasheet |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
HS5J V7GDIODE GEN PURP 600V 5A DO214AB Taiwan Semiconductor Corporation |
1,363 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
TST10L60CW C0GDIODE SCHOTTKY 60V 5A TO220AB Taiwan Semiconductor Corporation |
924 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 650 mV @ 5 A | |
|
LSIC2SD065A10ASIC SCHOTTKY DIOD 650V 10A TO220 Littelfuse Inc. |
1,018 | - |
RFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 27A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
DSB10I45PMDIODE SCHOTTKY 45V 10A TO220FP IXYS |
400 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 7 mA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 560 mV @ 10 A | |
|
NTE6047R-1KV PRV 85A FAST REC AK NTE Electronics, Inc |
2,460 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 1 µs | 100 µA @ 1000 V | 1000 V | 85A | -40°C ~ 125°C | 1.75 V @ 267 A | |
|
SCS304AMCDIODES SILICON CARBIDE Rohm Semiconductor |
573 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 200pF @ 1V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 4A (DC) | 175°C (Max) | 1.5 V @ 4 A | |
|
HS5A V7GDIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation |
1,321 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1 V @ 5 A | |
|
CDBC5150-HFDIODE SCHOTTKY 150V 5A DO214AB Comchip Technology |
193 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 380pF @ 4V, 1MHz | - | 500 µA @ 150 V | 150 V | 5A (DC) | -50°C ~ 175°C | 870 mV @ 5 A | |
|
LSIC2SD065D10ADIODE SCHOTTKY SIC 650V 10A Littelfuse Inc. |
830 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 470pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 27A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
GI758R- 800 PRV 6A NTE Electronics, Inc |
3,276 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 800 V | 800 V | 6A | -65°C ~ 175°C | 950 mV @ 6 A | |
|
NTE6046R-1KV PRV 85A FAST REC.KK NTE Electronics, Inc |
2,398 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 1 µs | 100 µA @ 1000 V | 1000 V | 85A | -40°C ~ 125°C | 1.75 V @ 267 A | |
|
VS-15ETX06FP-N3DIODE GEN PURP 600V 15A TO220FP Vishay General Semiconductor - Diodes Division |
547 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 22 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
|
HS5M V7GDIODE GEN PURP 1KV 5A DO214AB Taiwan Semiconductor Corporation |
1,130 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 5A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
MBR10100ULPS-TPDIODE SCHOTTKY 100V 10A TO277B Micro Commercial Co |
3,364 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | 700 mV @ 10 A | |
|
S3D20065GTRDIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions |
790 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1450pF @ 0V, 1MHz | - | 30 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.7 V @ 20 A |