| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BY203-20STRDIODE AVALANCHE 2KV 250MA SOD57 Vishay General Semiconductor - Diodes Division |
654 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 2 µA @ 1200 V | 2000 V | 250mA | -55°C ~ 150°C | 2.4 V @ 200 mA | |
|
|
6A10-GDIODE GEN PURP 1KV 6A R6 Comchip Technology |
470 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 6A | -55°C ~ 125°C | 1 V @ 6 A | |
|
HER303BULKDIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC. |
2,500 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -65°C ~ 150°C | 1.1 V @ 3 A | |
|
STB15200TRDIODE SCHOTTKY 200V D2PAK SMC Diode Solutions |
373 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 160 µA @ 200 V | 200 V | - | -55°C ~ 150°C | 1.1 V @ 15 A | |
|
EU 2AV1DIODE GEN PURP 600V 1A AXIAL Sanken |
120 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
STPSC8H065B-TRDIODE SCHOTTKY 650V 8A DPAK STMicroelectronics |
1,596 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 414pF @ 0V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | 1.75 V @ 8 A | |
|
|
CMSH3-20M TR13 PBFREEDIODE SCHOTTKY 20V 3A SMB Central Semiconductor Corp |
519 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 280pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 3A | -65°C ~ 150°C | 550 mV @ 3 A | |
|
|
EK 16V1DIODE SCHOTTKY 60V 1.5A AXIAL Sanken |
477 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 60 V | 60 V | 1.5A | -40°C ~ 150°C | 620 mV @ 1.5 A | |
|
BAS116E6327HTSA1DIODE GEN PURP 80V 250MA SOT23-3 Infineon Technologies |
1,367 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 1.5 µs | 5 nA @ 75 V | 80 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
RURD660S9A-F085DIODE GEN PURP 600V 6A TO252AA onsemi |
266 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 83 ns | 100 µA @ 600 V | 600 V | 6A | -55°C ~ 175°C | 1.5 V @ 6 A |
|
CDBA1150-HFDIODE SCHOTTKY 150V 1A DO214AC Comchip Technology |
102 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 500 µA @ 150 V | 150 V | 1A (DC) | -50°C ~ 175°C | 870 mV @ 1 A | |
|
SICU0460B-TP650V,4A,SIC SBD,TO-252 PACKAGE Micro Commercial Co |
2,435 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 200pF @ 0V, 1MHz | - | 15 µA @ 650 V | 650 V | 4A | -55°C ~ 175°C | 1.8 V @ 4 A | |
|
V20PWM45HM3/IDIODE SCHOTTKY 45V 20A SLIMDPAK Vishay General Semiconductor - Diodes Division |
322 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 3100pF @ 4V, 1MHz | - | 700 µA @ 45 V | 45 V | 20A | -40°C ~ 175°C | 660 mV @ 20 A |
|
ES2B R5GDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
462 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
BY251GPHE3/73DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,325 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
DB2X41400LDIODE SCHOTTKY 40V 2A MINI2 Panasonic Electronic Components |
2,816 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 70pF @ 10V, 1MHz | 30 ns | 200 µA @ 40 V | 40 V | 2A | 125°C (Max) | 490 mV @ 2 A | |
|
RB521S-40TE61DIODE SCHOTTKY 40V 200MA EMD2 Rohm Semiconductor |
3,106 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | - | - | 90 µA @ 40 V | 40 V | 200mA | 150°C (Max) | 540 mV @ 200 mA | |
|
|
FES8JTHE3/45DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,081 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A |
|
BYC5DX-500,127DIODE GEN PURP 500V 5A TO220FP WeEn Semiconductors |
2,085 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 16 ns | 40 µA @ 500 V | 500 V | 5A | 150°C (Max) | 2 V @ 5 A | |
|
|
BY253P-E3/73DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,183 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |