| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
M100A-E3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,441 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 50 V | 50 V | 1A | -50°C ~ 150°C | 1 V @ 1 A | |
|
|
RGP30DHE3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,979 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
RFN5B6STLDIODE GEN PURP 600V 5A CPD Rohm Semiconductor |
3,572 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.55 V @ 5 A | |
|
1N5818-BDIODE SCHOTTKY 30V 1A DO41 Diodes Incorporated |
2,924 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -65°C ~ 125°C | 550 mV @ 1 A | |
|
GP10-4004EHM3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,903 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
M100D-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,741 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 200 V | 200 V | 1A | -50°C ~ 150°C | 1 V @ 1 A | |
|
|
RGP30GHE3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,999 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | 5 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
1SR159-200TE25DIODE GEN PURP 200V 1A PMDS Rohm Semiconductor |
3,773 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 200 V | 200 V | 1A | 150°C (Max) | 980 mV @ 1 A | |
|
1N5819-BDIODE SCHOTTKY 40V 1A DO41 Diodes Incorporated |
2,865 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |
|
GP10G-4004E-M3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,008 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
M100G-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,445 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 400 V | 400 V | 1A | -50°C ~ 150°C | 1 V @ 1 A | |
|
|
RGP30JHE3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,202 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
RB168M-60TRDIODE SCHOTTKY 60V 1A PMDU Rohm Semiconductor |
2,672 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 µA @ 60 V | 60 V | 1A | 150°C (Max) | 680 mV @ 1 A |
|
1N5820-BDIODE SCHOTTKY 20V 3A DO201AD Diodes Incorporated |
3,756 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 2 mA @ 20 V | 20 V | 3A | -65°C ~ 150°C | 475 mV @ 3 A | |
|
GP10-4004HE3/53DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,764 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N3070DIODE GEN PURP 175V 100MA DO7 Microchip Technology |
2,552 | - |
RFQ |
Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Through Hole | - | 50 ns | 100 nA @ 175 V | 175 V | 100mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
M100J-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,468 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | 1 V @ 1 A | |
|
|
RGP30KHE3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,684 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 500 ns | 5 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
RF051VA1STRDIODE GEN PURP 100V 500MA TUMD2 Rohm Semiconductor |
2,014 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 100 V | 100 V | 500mA | 150°C (Max) | 980 mV @ 500 mA | |
|
1N5821-BDIODE SCHOTTKY 30V 3A DO201AD Diodes Incorporated |
2,021 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 2 mA @ 30 V | 30 V | 3A | -65°C ~ 150°C | 500 mV @ 3 A |