| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N646-1DIODE GEN PURP 300V 400MA DO35 Microchip Technology |
2,145 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 50 nA @ 300 V | 300 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
MBRB16H60HE3/81DIODE SCHOTTKY 60V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,836 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 16A | -65°C ~ 175°C | 730 mV @ 16 A | ||
|
RS1PJHE3/85ADIODE GEN PURP 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,747 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 9pF @ 4V, 1MHz | 250 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SBRT25U80SLP-13DIODE SBR 80V 25A POWERDI5060-8 Diodes Incorporated |
2,224 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchSBR | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Obsolete | Surface Mount | - | - | 500 µA @ 80 V | 80 V | 25A | -55°C ~ 150°C | 610 mV @ 25 A |
|
1N4946GP-M3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,881 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
GP10DHM3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,734 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N648-1DIODE GEN PURP 500V 400MA DO35 Microchip Technology |
2,025 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 50 nA @ 500 V | 500 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
MBRB735-E3/81DIODE SCHOTTKY 35V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
2,924 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
RS2AHE3/5BTDIODE GEN PURP 50V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,545 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
GP30DL-E3/72DIODE GEN PURP 200V 3A Vishay General Semiconductor - Diodes Division |
3,952 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 5 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A | ||
|
RB160MM-60TRDIODE SCHOTTKY 60V 1A PMDU Rohm Semiconductor |
3,937 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 60 V | 60 V | 1A | 150°C (Max) | 550 mV @ 1 A | |
|
STPSC806DDIODE SCHOTTKY 600V 8A TO220AC STMicroelectronics |
697 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 450pF @ 0V, 1MHz | 0 ns | 100 µA @ 600 V | 600 V | 8A | -40°C ~ 175°C | 1.7 V @ 8 A | |
|
CMS01(TE12L,Q,M)DIODE SCHOTTKY 30V 3A MFLAT Toshiba Semiconductor and Storage |
3,805 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 5 mA @ 30 V | 30 V | 3A | -40°C ~ 125°C | 370 mV @ 3 A | |
|
VS-1N1190RDIODE GEN PURP 600V 35A DO203AB Vishay General Semiconductor - Diodes Division |
3,033 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 mA @ 600 V | 600 V | 35A | -65°C ~ 190°C | 1.7 V @ 110 A | |
|
STPS0530ZDIODE SCHOTTKY 30V 500MA SOD123 STMicroelectronics |
3,215 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 130 µA @ 30 V | 30 V | 500mA | 150°C (Max) | 430 mV @ 500 mA | |
|
|
S40KRDIODE GEN PURP REV 800V 40A DO5 GeneSiC Semiconductor |
3,315 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 100 V | 800 V | 40A | -65°C ~ 190°C | 1.1 V @ 40 A | |
|
DFLR1400-7DIODE GP 400V 1A POWERDI123 Diodes Incorporated |
2,657 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | - | 3 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
STPSC6H065DIDIODE SCHOTTKY 650V 6A TO220AC STMicroelectronics |
605 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | - | 60 µA @ 650 V | 650 V | 6A | -40°C ~ 175°C | 1.75 V @ 6 A | |
|
B560CQ-13-FDIODE SCHOTTKY 60V 5A SMC Diodes Incorporated |
3,641 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 300pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 700 mV @ 5 A |
|
FMCA-22065DIODE SCHOTTKY 600V 20A TO220-2 Sanken |
3,326 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | - | 0 ns | 15 mA @ 600 V | 600 V | 20A | -40°C ~ 175°C | 1.5 V @ 10 A |