| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N4153-1DIODE GEN PURP 50V 150MA DO35 Microchip Technology |
2,740 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/337 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | 4 ns | 50 nA @ 50 V | 50 V | 150mA | -65°C ~ 175°C | 880 mV @ 20 mA |
|
GP10-4007EHM3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,287 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
1N4937GPEHE3/91DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,214 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 12pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | 1.2 V @ 1 A |
|
EL02ZDIODE GEN PURP 200V 1.5A AXIAL Sanken |
3,212 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 40 ns | 50 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 980 mV @ 1.5 A | |
|
|
UG8DTHE3/45DIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,417 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1 V @ 8 A |
|
MBRB1635HE3/45DIODE SCHOTTKY 35V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,451 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
JANTX1N4153UR-1DIODE GEN PURP 50V 150MA DO213AA Microchip Technology |
3,001 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/337 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | - | 50 V | 150mA | -65°C ~ 175°C | 550 mV @ 100 µA |
|
GP10-4007E-M3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,654 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
1N4937GP-M3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,265 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
1SS380VMTE-171SS380VM IS LOW IR SW Rohm Semiconductor |
2,593 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 500mV, 1MHz | - | 10 nA @ 80 V | 80 V | 100mA | 150°C (Max) | 1.2 V @ 100 mA | |
|
EN 01ZDIODE GEN PURP 200V 1.5A AXIAL Sanken |
3,363 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 10 µA @ 200 V | 200 V | 1.5A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
|
|
UG8FTHE3/45DIODE GEN PURP 300V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,022 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
|
MBRB1645HE3/45DIODE SCHOTTKY 45V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,021 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
JANTXV1N4153UR-1DIODE GEN PURP 50V 150MA DO213AA Microchip Technology |
2,039 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/337 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 50 nA @ 50 V | 50 V | 150mA | -65°C ~ 175°C | 880 mV @ 20 mA |
|
GP10-4007HM3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,130 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
1N4944GP-M3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,535 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
FMB-G16LDIODE SCHOTTKY 60V 6A TO220-2 Sanken |
2,284 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 5 mA @ 60 V | 60 V | 6A | -40°C ~ 150°C | 720 mV @ 6 A | |
|
|
UG8GTHE3/45DIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,816 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A |
|
MBRB1650-E3/45DIODE SCHOTTKY 50V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,227 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1 mA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 750 mV @ 16 A | |
|
JAN1N459DIODE GEN PURP 200V 150MA DO35 Microchip Technology |
3,685 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/193 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 200 V | 200 V | 150mA | -65°C ~ 150°C | 1 V @ 100 mA |