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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRF16H45HE3/45DIODE SCHOTTKY 45V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,596 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 660 mV @ 16 A | |
|
UF2007-TDIODE GEN PURP 1KV 2A DO15 Diodes Incorporated |
3,759 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 2A | -65°C ~ 150°C | 1.7 V @ 2 A | |
|
JANS1N6661USDIODE GEN PURP 225V 500MA D5D Microchip Technology |
3,007 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/587 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 225 V | 225 V | 500mA | -65°C ~ 175°C | 1 V @ 400 mA |
|
RGP10M-E3/53DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,760 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
MBRB10H35HE3/81DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,779 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 175°C | 850 mV @ 20 A |
|
|
EGP10FHM3/73DIODE GEN PURP 300V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,612 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
|
|
MBRF16H60-E3/45DIODE SCHOTTKY 60V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
2,726 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 16A | -65°C ~ 150°C | 730 mV @ 16 A | |
|
STTH10LCD06SG-TRDIODE GEN PURP 600V 10A D2PAK STMicroelectronics |
2,795 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 5 µA @ 600 V | 600 V | 10A | 175°C (Max) | 2 V @ 10 A | |
|
JANTX1N6661USDIODE GEN PURP 225V 500MA D5A Microchip Technology |
3,794 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/587 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 225 V | 225 V | 500mA | -65°C ~ 175°C | 1 V @ 400 mA |
|
CUS15S40,H3FDIODE SCHOTTKY 40V 1.5A Toshiba Semiconductor and Storage |
3,016 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 170pF @ 0V, 1MHz | - | 200 µA @ 40 V | 40 V | 1.5A | 125°C (Max) | 450 mV @ 1 A | |
|
RM 2AV1DIODE GEN PURP 600V 1.2A AXIAL Sanken |
907 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |
|
S2DDIODE GEN PURP 200V 2A SMB onsemi |
3,168 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2 µs | 1 µA @ 200 V | 200 V | 2A | -65°C ~ 150°C | 1.15 V @ 2 A | |
|
|
RGP10ME-E3/91DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,587 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
MBRB10H45HE3/81DIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,550 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 175°C | 850 mV @ 20 A |
|
|
EGP10F-M3/73DIODE GEN PURP 300V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,993 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A | |
|
|
MBRF16H60HE3/45DIODE SCHOTTKY 60V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
3,312 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 16A | -65°C ~ 150°C | 730 mV @ 16 A | |
|
VS-10MQ100HM3/5ATDIODE SCHOTTKY 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,793 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 38pF @ 10V, 1MHz | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 780 mV @ 1 A |
|
BAS316,115DIODE GEN PURP 100V 250MA SOD323 Nexperia USA Inc. |
2,459 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, BAS16 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 100 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA |
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|
STTH10LCD06SB-TRDIODE GEN PURP 600V 10A DPAK STMicroelectronics |
2,583 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 5 µA @ 600 V | 600 V | 10A | 175°C (Max) | 2 V @ 10 A | |
|
|
JANTXV1N6661USDIODE GEN PURP 225V 500MA D5A Microchip Technology |
2,977 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/587 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 225 V | 225 V | 500mA | -65°C ~ 175°C | 1 V @ 400 mA |
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