| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SD103AW-G3-08DIODE SCHOTTKY 350MA 40V SOD123 Vishay General Semiconductor - Diodes Division |
3,083 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | 350mA (DC) | -55°C ~ 150°C | 600 mV @ 200 mA | |
|
SM4001PL-TPDIODE GEN PURP 50V 1A SOD123FL Micro Commercial Co |
215 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
1N4448DIODE GEN PURP 100V 200MA DO35 Rochester Electronics, LLC |
3,421 | - |
RFQ |
Datasheet |
Bulk,Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
GI752-E3/73DIODE GEN PURP 200V 6A P600 Vishay General Semiconductor - Diodes Division |
3,857 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 200 V | 200 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
A1N5404G-GDIODE GEN PURP 400V 3A DO27 Comchip Technology |
979 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
RGP10JHM3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,485 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
NSB8MTHE3/45DIODE GEN PURP 1KV 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,246 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
JANTXV1N4148UBDIODE GEN PURP 75V 200MA SMD Microchip Technology |
3,774 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/116 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 4pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 200mA | -65°C ~ 200°C | 1.2 V @ 100 mA | |
|
NRVBA140T3GDIODE SCHOTTKY 40V 1A SMA onsemi |
2,132 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
VS-8EWF02SPBFDIODE GEN PURP 200V 8A TO252 Vishay General Semiconductor - Diodes Division |
3,340 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1.2 V @ 8 A | |
|
RGP10J-M3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,305 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
NSF8BT-E3/45DIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,504 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
GB05SLT12-220DIODE SCHOTTKY 1.2KV 5A TO220AC GeneSiC Semiconductor |
2,604 | - |
RFQ |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 5A | -55°C ~ 175°C | 1.8 V @ 2 A | ||
|
JANTXV1N4148UB2DIODE GEN PURP 75V 200MA SMD Microchip Technology |
2,510 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/116 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 4pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 200mA | -65°C ~ 200°C | 1.2 V @ 100 mA | |
|
NRVBA340T3GDIODE SCHOTTKY 40V 3A SMA onsemi |
2,739 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 300 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 450 mV @ 3 A | |
|
VS-8EWF04SPBFDIODE GEN PURP 400V 8A TO252 Vishay General Semiconductor - Diodes Division |
2,164 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 100 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.2 V @ 8 A | |
|
RGP10KE-M3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,603 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
NSF8BTHE3/45DIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,523 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
GB05SLT12-252DIODE SILICON 1.2KV 5A TO252 GeneSiC Semiconductor |
2,804 | - |
RFQ |
Datasheet |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 5A | -55°C ~ 175°C | 1.8 V @ 2 A | |
|
JANTXV1N5187DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
2,453 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/424 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 2 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |