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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFN3B6STLDIODE GEN PURPOSE CPD Rohm Semiconductor |
2,814 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
RM 11ADIODE GEN PURP 600V 1.2A AXIAL Sanken |
3,162 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
|
UF1D R1GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,368 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
IDL08G65C5XUMA1DIODE SCHOTTKY 650V 8A VSON-4 Infineon Technologies |
3,352 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 250pF @ 1V, 1MHz | 0 ns | 140 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 150°C | 1.7 V @ 8 A |
|
TRS10E65C,S1QDIODE SCHOTTKY 650V 10A TO220-2L Toshiba Semiconductor and Storage |
2,657 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | - | 0 ns | 90 µA @ 650 V | 650 V | 10A (DC) | 175°C (Max) | 1.7 V @ 10 A | |
|
|
MBR5200VPTR-G1DIODE SCHOTTKY 200V 5A DO27 Diodes Incorporated |
3,230 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 200 V | 200 V | 5A | -65°C ~ 150°C | 950 mV @ 5 A | |
|
|
RFN5B2STLDIODE GEN PURPOSE CPD Rohm Semiconductor |
2,180 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
RM 11BDIODE GEN PURP 800V 1.2A AXIAL Sanken |
3,209 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 10 µA @ 800 V | 800 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
|
|
UF1DHR1GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,506 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
IDL10G65C5XUMA1DIODE SCHOTTKY 650V 10A VSON-4 Infineon Technologies |
3,900 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 180 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 150°C | 1.7 V @ 10 A |
|
SBR1U30CSP-7DIODE SBR 30V 1A 2CSP Diodes Incorporated |
2,985 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SBR® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Obsolete | Surface Mount | 80pF @ 4V, 1MHz | - | 75 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 480 mV @ 1 A |
|
MBR5H150VP-E1DIODE SCHOTTKY 150V 5A DO27 Diodes Incorporated |
3,223 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 8 µA @ 150 V | 150 V | 5A | 175°C (Max) | 920 mV @ 5 A | |
|
|
RFN5B3STLDIODE GEN PURPOSE CPD Rohm Semiconductor |
3,161 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
RM 11CDIODE GEN PURP 1KV 1.2A AXIAL Sanken |
2,135 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 10 µA @ 1000 V | 1000 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
|
|
UF1G R1GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,193 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
IDL12G65C5XUMA1DIODE SCHOTTKY 650V 12A VSON-4 Infineon Technologies |
3,558 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 360pF @ 1V, 1MHz | 0 ns | 190 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 150°C | 1.7 V @ 12 A |
|
BAV16W-13-FDIODE GEN PURP 100V 150MA SOD123 Diodes Incorporated |
2,212 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 100 V | 150mA | -65°C ~ 150°C | 1.25 V @ 150 mA | |
|
|
MBR5H150VP-G1DIODE SCHOTTKY 150V 5A DO27 Diodes Incorporated |
2,386 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 8 µA @ 150 V | 150 V | 5A | 175°C (Max) | 920 mV @ 5 A | |
|
|
1N3612GP-M3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
3,295 | - |
RFQ |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
RM 1ADIODE GEN PURP 600V 1A AXIAL Sanken |
3,317 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 950 mV @ 1 A |
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