| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4448W-F2-0000HFDIODE GEN PURP 100V 250MA SOD123 Yangzhou Yangjie Electronic Technology Co.,Ltd |
658 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 200 nA @ 75 V | 100 V | 250mA | -55°C ~ 150°C | 1 V @ 100 mA | |
|
NRVBS3201T3GDIODE SCHOTTKY 200V 3A SMC onsemi |
2,206 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | 35 ns | 1 mA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 840 mV @ 3 A | |
|
UGE3126AY4DIODE GEN PURP 24KV 2A UGE IXYS |
2,169 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 1 mA @ 24000 V | 24000 V | 2A | - | 18 V @ 3 A | |
|
1N3617RDO4 25 AMP SILICON RECTIFIER Solid State Inc. |
3,747 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 2.25 µA @ 150 V | 150 V | 16A | -65°C ~ 200°C | 1.2 V @ 50 A | |
|
RB168M-40TRDIODE SCHOTTKY 40V 1A PMDU Rohm Semiconductor |
2,699 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 550 nA @ 40 V | 40 V | 1A | 150°C (Max) | 650 mV @ 1 A |
|
RS2G-E3/52TDIODE GEN PURP 400V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,311 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
SBR8B60P5-13DIODE SBR 60V 5A POWERDI5 Diodes Incorporated |
2,876 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Super Barrier | Obsolete | Surface Mount | - | - | 220 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 600 mV @ 8 A | |
|
|
P300D-E3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,049 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 200 V | 200 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
ES2GA2A -400V - SMA (DO-214AC) - RECT SURGE |
250 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.25 V @ 2 A | |
|
ND350N12KHPSA1DIODE GP 1.2KV 350A BG-PB50ND-1 Infineon Technologies |
3,482 | - |
RFQ |
Datasheet |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 30 mA @ 1200 V | 1200 V | 350A | -40°C ~ 135°C | - | |
|
1N3616RDO4 25 AMP SILICON RECTIFIER Solid State Inc. |
2,080 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 2.5 µA @ 100 V | 100 V | 16A | -65°C ~ 200°C | 1.2 V @ 50 A | |
|
RS2J-E3/52TDIODE GEN PURP 600V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,907 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
P300J-E3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,311 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
ES2DA2A -200V - SMA (DO-214AC) - RECT SURGE |
228 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 920 mV @ 2 A | |
|
VSSA210-M3/61TDIODE SCHOTTKY 100V 1.7A DO214AC Vishay General Semiconductor - Diodes Division |
2,409 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 175pF @ 4V, 1MHz | - | - | 100 V | 1.7A | -40°C ~ 150°C | 700 mV @ 2 A |
|
DZ600N18KHPSA1DIODE MODULE 1800V 600A Infineon Technologies |
3,113 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1800 V | 1800 V | 600A | -40°C ~ 150°C | - | |
|
1N1346RADO4 6 AMP SILICON RECTIFIER Solid State Inc. |
3,156 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 200°C | 1.3 V @ 30 A | |
|
RS2K-E3/52TDIODE GEN PURP 800V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,337 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
P300M-E3/54DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,347 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
ES2JA2A -600V - SMA (DO-214AC) - RECT SURGE |
180 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |