| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAV102,115DIODE GEN PURP 150V 250MA LLDS Nexperia USA Inc. |
2,101 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 250mA (DC) | 175°C (Max) | 1.25 V @ 200 mA | |
|
1N4148WS-G3-08DIODE GEN PURP 75V 150MA SOD323 Vishay General Semiconductor - Diodes Division |
3,993 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 100 µA @ 100 V | 75 V | 150mA | -55°C ~ 150°C | 1.2 V @ 100 mA | |
|
BYT52J-TRDIODE AVALANCHE 600V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,204 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 600 V | 600 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
BAT54-HFDIODE SCHOTTKY 30V 0.2A SOT-23 Comchip Technology |
5,980 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | BAT54-HF | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA | 125°C (Max) | 1 V @ 100 mA |
|
PMEG040V050EPDZDIODE SCHOTTKY 40V 5A CFP15 Nexperia USA Inc. |
3,660 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 395pF @ 1V, 1MHz | 13 ns | 120 µA @ 40 V | 40 V | 5A | 175°C (Max) | 520 mV @ 5 A |
|
RGL41M-E3/96DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,322 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BAV102,135DIODE GEN PURP 150V 250MA LLDS Nexperia USA Inc. |
222 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 250mA (DC) | 175°C (Max) | 1.25 V @ 200 mA | |
|
NSR1020MW2T3GDIODE SCHOTTKY 20V 1A SOD323 onsemi |
2,630 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 29pF @ 5V, 1MHz | - | 40 µA @ 15 V | 20 V | 1A (DC) | 125°C (Max) | 540 mV @ 1 A | |
|
S5GHE3_A/HDIODE GEN PURP 400V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,564 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A |
|
|
RSFBL RHGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,665 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
|
VSB1545S-E3/73DIODE SCHOTTKY 45V 7A DO201AD Vishay General Semiconductor - Diodes Division |
3,380 | - |
RFQ |
Datasheet |
Tape & Box (TB) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 1995pF @ 4V, 1MHz | - | 1 mA @ 45 V | 45 V | 7A | -40°C ~ 150°C | 590 mV @ 15 A |
|
|
SS310L RHGDIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation |
2,904 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
BYC10-600PQDIODE GEN PURP 600V 10A TO220AC WeEn Semiconductors |
2,383 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 19 ns | - | 600 V | 10A | 150°C (Max) | 1.8 V @ 10 A | ||
|
1N4934GHR1GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,201 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
SBLB1030HE3/45DIODE SCHOTTKY DUAL TO-263AB Vishay General Semiconductor - Diodes Division |
2,855 | - |
RFQ |
Datasheet |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
RSFBLHRHGDIODE GEN PURP 100V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,674 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
VSB15L45-M3/73DIODE SCHOTTKY 45V 7A P600 Vishay General Semiconductor - Diodes Division |
2,805 | - |
RFQ |
Datasheet |
Tape & Box (TB) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 1430pF @ 4V, 1MHz | - | 4 mA @ 45 V | 45 V | 7A | -40°C ~ 150°C | 570 mV @ 15 A |
|
|
SS310LHRHGDIODE SCHOTTKY 100V 3A SUB SMA Taiwan Semiconductor Corporation |
2,002 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
BYC10X-600PQDIODE GEN PURP 600V 10A TO220F WeEn Semiconductors |
3,597 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 200 µA @ 600 V | 600 V | 10A | 150°C (Max) | 2.9 V @ 10 A | |
|
1N4935G R1GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,976 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |