| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-MURB1520TRLPBFDIODE GEN PURP 200V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,454 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 22 ns | 10 µA @ 200 V | 200 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
|
S1AL RHGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,375 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-10ETF06STRLPBFDIODE GEN PURP 600V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,514 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 200 ns | 100 µA @ 200 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
1N5392GHR0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,444 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.1 V @ 1.5 A |
|
RS1PBHM3/85ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,679 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
1N5819HR1GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
3,062 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 600 mV @ 1 A |
|
CLH01(TE16L,Q)DIODE GEN PURP 200V 3A L-FLAT Toshiba Semiconductor and Storage |
3,272 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 3A (DC) | -40°C ~ 150°C | 980 mV @ 3 A | |
|
|
S1ALHRHGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,174 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
VS-10ETF06STRRPBFDIODE GEN PURP 600V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,053 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 200 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
1N5393G R0GDIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,743 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
RS1PDHM3/84ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,555 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
BA157G R1GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,549 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
CLH01(TE16R,Q)DIODE GEN PURP 200V 3A L-FLAT Toshiba Semiconductor and Storage |
3,080 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 3A (DC) | -40°C ~ 150°C | 980 mV @ 3 A | |
|
|
S1BL RHGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,750 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-10ETF10STRLPBFDIODE GEN PURP 1KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,513 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
1N5393GHR0GDIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,314 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A |
|
RS1PDHM3/85ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,029 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
BA157GHR1GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,205 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
CLH02(TE16L,Q)DIODE GEN PURP 300V 3A L-FLAT Toshiba Semiconductor and Storage |
3,939 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 300 V | 300 V | 3A (DC) | -40°C ~ 150°C | 1.3 V @ 3 A | |
|
|
S1BLHRHGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,077 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |