| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RS1K-E3/5ATDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,954 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
ER800_T0_00001SUPERFAST RECOVERY RECTIFIERS Panjit International Inc. |
2,418 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 1 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | ||
|
SBM1550USS_AY_00001EXTREME LOW VF SCHOTTKY RECTIFIE Panjit International Inc. |
2,866 | - |
RFQ |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 320 µA @ 50 V | 50 V | 15A | -55°C ~ 150°C | 490 mV @ 15 A | ||
|
CMS05(TE12L,Q,M)DIODE SCHOTTKY 30V 5A MFLAT Toshiba Semiconductor and Storage |
3,076 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 330pF @ 10V, 1MHz | - | 800 µA @ 30 V | 30 V | 5A | -40°C ~ 150°C | 450 mV @ 5 A | |
|
SK39B R5GDIODE SCHOTTKY 90V 3A DO214AA Taiwan Semiconductor Corporation |
2,538 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
|
SS215L RTGDIODE SCHOTTKY 150V 2A SUB SMA Taiwan Semiconductor Corporation |
2,974 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
APD160VH-G1DIODE SCHOTTKY 60V 1A Diodes Incorporated |
3,256 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | - | - | - | 500 µA @ 60 V | 60 V | 1A | -65°C ~ 125°C | 680 mV @ 1 A | |
|
GPA801HC0GDIODE GEN PURP 50V 8A TO220AC Taiwan Semiconductor Corporation |
3,359 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
SB320-BDIODE SCHOTTKY 20V 3A DO201AD Diodes Incorporated |
3,027 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 20 V | 20 V | 3A | -65°C ~ 125°C | 500 mV @ 3 A | |
|
SS34HR7GDIODE GEN PURP 40V 3A DO214AB Taiwan Semiconductor Corporation |
3,059 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A |
|
SK39BHR5GDIODE SCHOTTKY 90V 3A DO214AA Taiwan Semiconductor Corporation |
2,212 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
|
SS215LHMQGDIODE SCHOTTKY 150V 2A SUB SMA Taiwan Semiconductor Corporation |
3,886 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
PR1501S-BDIODE GEN PURP 50V 1.5A DO41 Diodes Incorporated |
2,791 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -65°C ~ 150°C | 1.2 V @ 1.5 A | |
|
GPA802 C0GDIODE GEN PURP 100V 8A TO220AC Taiwan Semiconductor Corporation |
2,298 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
SB330-BDIODE SCHOTTKY 30V 3A DO201AD Diodes Incorporated |
3,117 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 30 V | 30 V | 3A | -65°C ~ 125°C | 500 mV @ 3 A | |
|
SS35HR7GDIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
2,691 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
|
SK510BHR5GDIODE SCHOTTKY 100V 5A DO214AA Taiwan Semiconductor Corporation |
2,103 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A |
|
|
SS215LHMTGDIODE SCHOTTKY 150V 2A SUB SMA Taiwan Semiconductor Corporation |
2,445 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
PR1502S-BDIODE GEN PURP 100V 1.5A DO41 Diodes Incorporated |
3,913 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -65°C ~ 150°C | 1.2 V @ 1.5 A | |
|
GPA802HC0GDIODE GEN PURP 100V 8A TO220AC Taiwan Semiconductor Corporation |
2,232 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |