| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
SS110HR3GDIODE SCHOTTKY 100V 1A DO214AC Taiwan Semiconductor Corporation |
3,895 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
|
1N4004G A0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,726 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
BAS40-7-F-31DIODE SCHOTTKY 40V 200MA SOT23-3 Diodes Incorporated |
2,947 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 5pF @ 0V, 1MHz | 5 ns | 200 nA @ 30 V | 40 V | 200mA (DC) | -55°C ~ 125°C | 1 V @ 40 mA | ||
|
SF10HG-BDIODE GEN PURP 500V 1A DO41 Diodes Incorporated |
3,555 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 10 µA @ 500 V | 500 V | 1A | -65°C ~ 150°C | 1.5 V @ 1 A | |
|
HERA806G C0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
2,937 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 55pF @ 4V, 1MHz | 80 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
MBR735HC0GDIODE SCHOTTKY 35V 7.5A TO220AC Taiwan Semiconductor Corporation |
2,019 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 35 V | 35 V | 7.5A | -55°C ~ 150°C | 840 mV @ 15 A |
|
|
SS110L RFGDIODE SCHOTTKY 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,285 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
|
1N4004GHA0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
2,368 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
BAT760-7-36DIODE SCHOTTKY 30V 1A SOD323 Diodes Incorporated |
3,987 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 25pF @ 5V, 1MHz | - | 50 µA @ 15 V | 30 V | 1A | -65°C ~ 150°C | 550 mV @ 1 A | ||
|
SF10JG-BDIODE GEN PURP 600V 1A DO41 Diodes Incorporated |
2,827 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 150°C | 1.5 V @ 1 A | |
|
HERA807G C0GDIODE GEN PURP 800V 8A TO220AC Taiwan Semiconductor Corporation |
2,176 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 55pF @ 4V, 1MHz | 80 ns | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
MBR745 C0GDIODE SCHOTTKY 45V 7.5A TO220AC Taiwan Semiconductor Corporation |
2,397 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 45 V | 45 V | 7.5A | -55°C ~ 150°C | 840 mV @ 15 A | |
|
|
SS110LHR3GDIODE SCHOTTKY 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,460 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
1N4006G A0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,109 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
E0714DDIODE Diodes Incorporated |
2,162 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
SF30AG-BDIODE GEN PURP 50V 3A DO201AD Diodes Incorporated |
2,485 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 75pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A | |
|
HERAF1001G C0GDIODE GEN PURP 50V 10A ITO220AC Taiwan Semiconductor Corporation |
3,941 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 1 V @ 10 A | |
|
MBR745HC0GDIODE SCHOTTKY 50V 7.5A TO220AC Taiwan Semiconductor Corporation |
2,247 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 50 V | 50 V | 7.5A | -55°C ~ 150°C | 840 mV @ 15 A |
|
|
SS110LHRFGDIODE SCHOTTKY 100V 1A SUB SMA Taiwan Semiconductor Corporation |
3,413 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
1N4006GHA0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
2,323 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |