| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DSEI60-12ADIODE GEN PURP 1.2KV 52A TO247AD IXYS |
3,290 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 2.2 mA @ 1200 V | 1200 V | 52A | -40°C ~ 150°C | 2.55 V @ 60 A | |
|
GV810B_R2_00001SURFACE MOUNT RECTIFIER Panjit International Inc. |
2,953 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | ||
|
1SS193-TPDIODE GEN PURP 80V 100MA SOT23 Micro Commercial Co |
2,892 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 3pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 80 V | 100mA (DC) | 150°C (Max) | 1.2 V @ 100 mA | |
|
TRS2E65F,S1QPB-F DIODE TO-220-2L IF=2A VRRM= Toshiba Semiconductor and Storage |
3,981 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 8.7pF @ 650V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 2A (DC) | 175°C (Max) | 1.6 V @ 2 A | ||
|
SD830YS_S2_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
3,602 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | 550 mV @ 8 A | ||
|
STPS10L60DDIODE SCHOTTKY 60V 10A TO220AC STMicroelectronics |
3,335 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 60 V | 60 V | 10A | 150°C (Max) | 600 mV @ 10 A | |
|
|
VS-12F60DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,867 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 600 V | 600 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
A15FRECTIFIER DIODE, 3A, 50V Rochester Electronics, LLC |
3,331 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 200 µA @ 50 V | 50 V | 3A | -65°C ~ 175°C | 1.2 V @ 3 A | |
|
BAS21WS-TPDIODE GEN PURP 250V 200MA SOD323 Micro Commercial Co |
3,053 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 200mA (DC) | -55°C ~ 155°C | 1.25 V @ 200 mA | |
|
PCDD0465G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
3,273 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 146pF @ 1V, 1MHz | 0 ns | 40 µA @ 650 V | 650 V | 4A (DC) | -55°C ~ 175°C | 1.7 V @ 4 A | ||
|
SD840YS_S2_00001SURFACE MOUNT SCHOTTKY BARRIER R Panjit International Inc. |
3,207 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 8A | -55°C ~ 150°C | 550 mV @ 8 A | ||
|
STTH8S06DDIODE GEN PURP 600V 8A TO220AC STMicroelectronics |
2,379 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 18 ns | 20 µA @ 600 V | 600 V | 8A | 175°C (Max) | 3.4 V @ 8 A | |
|
DSEP30-12ARDIODE GP 1.2KV 30A ISOPLUS247 IXYS |
2,215 | - |
RFQ |
Datasheet |
Tube | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 250 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 2.74 V @ 30 A |
|
MBRF2050 C0GDIODE SCHOTTKY 50V 20A ITO220AC Taiwan Semiconductor Corporation |
2,829 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 50 V | 50 V | 20A | -55°C ~ 150°C | 820 mV @ 20 A | |
|
SR1502 A0GDIODE SCHOTTKY 20V 15A R-6 Taiwan Semiconductor Corporation |
2,177 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 15A | -50°C ~ 150°C | 550 mV @ 15 A | |
|
MBR1650HC0GDIODE SCHOTTKY 50V 16A TO220AC Taiwan Semiconductor Corporation |
2,397 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 750 mV @ 16 A |
|
|
SS19LHM2GDIODE SCHOTTKY 90V 1A SUB SMA Taiwan Semiconductor Corporation |
3,457 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
SF14G A0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,091 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
MBRF2050HC0GDIODE SCHOTTKY 50V 20A ITO220AC Taiwan Semiconductor Corporation |
2,084 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 200 µA @ 50 V | 50 V | 20A | -55°C ~ 150°C | 820 mV @ 20 A |
|
SR1502HA0GDIODE SCHOTTKY 20V 15A R-6 Taiwan Semiconductor Corporation |
2,147 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 15A | -50°C ~ 150°C | 550 mV @ 15 A |