| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S2BHM4GDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
3,849 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A |
|
SF44GHB0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
2,595 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 1 V @ 4 A |
|
SFAF1602G C0GDIODE GEN PURP 100V 16A ITO220AC Taiwan Semiconductor Corporation |
3,426 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 130pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 975 mV @ 16 A | |
|
|
US1AHM2GDIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
3,346 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
SRT110 A0GDIODE SCHOTTKY 100V 1A TS-1 Taiwan Semiconductor Corporation |
2,453 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
|
S3AB M4GDIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation |
2,226 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
SF45G B0GDIODE GEN PURP 300V 4A DO201AD Taiwan Semiconductor Corporation |
3,770 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A | |
|
SR109HB0GDIODE SCHOTTKY 90V 1A DO204AL Taiwan Semiconductor Corporation |
2,175 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A |
|
SFAF1602GHC0GDIODE GEN PURP 100V 16A ITO220AC Taiwan Semiconductor Corporation |
3,562 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 130pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 975 mV @ 16 A |
|
|
US1B M2GDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
3,287 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
SRT110HA0GDIODE SCHOTTKY 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,748 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
S3ABHM4GDIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation |
2,880 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A |
|
SF45GHB0GDIODE GEN PURP 300V 4A DO201AD Taiwan Semiconductor Corporation |
3,154 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A |
|
SR110 B0GDIODE SCHOTTKY 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,130 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A | |
|
SFAF1603G C0GDIODE GEN PURP 150V 16A ITO220AC Taiwan Semiconductor Corporation |
2,188 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 130pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -55°C ~ 150°C | 975 mV @ 16 A | |
|
|
US1BHM2GDIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation |
3,552 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
SRT115 A0GDIODE SCHOTTKY 150V 1A TS-1 Taiwan Semiconductor Corporation |
3,196 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A | |
|
S3BB M4GDIODE GEN PURP 100V 3A DO214AA Taiwan Semiconductor Corporation |
3,325 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
SF46G B0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
3,035 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.3 V @ 4 A | |
|
SR110HB0GDIODE SCHOTTKY 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,201 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A |