| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SFAF2001GHC0GDIODE GEN PURP 50V 20A ITO220AC Taiwan Semiconductor Corporation |
3,134 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 20A | -55°C ~ 150°C | 975 mV @ 20 A |
|
SR1503HB0GDIODE SCHOTTKY 30V 15A R-6 Taiwan Semiconductor Corporation |
3,818 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 15A | -50°C ~ 150°C | 550 mV @ 15 A |
|
ES3G M6GDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
3,688 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SK29AHM2GDIODE SCHOTTKY 90V 2A DO214AC Taiwan Semiconductor Corporation |
2,987 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
|
SF64GHB0GDIODE GEN PURP 200V 6A DO201AD Taiwan Semiconductor Corporation |
3,872 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A |
|
FR155GHB0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,397 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
SFAF2002G C0GDIODE GEN PURP 100V 20A ITO220AC Taiwan Semiconductor Corporation |
2,369 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 20A | -55°C ~ 150°C | 975 mV @ 20 A | |
|
SR1504 B0GDIODE SCHOTTKY 40V 15A R-6 Taiwan Semiconductor Corporation |
2,656 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 40 V | 40 V | 15A | -50°C ~ 150°C | 550 mV @ 15 A | |
|
|
SK32A M2GDIODE SCHOTTKY 20V 3A DO214AC Taiwan Semiconductor Corporation |
2,173 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 150°C | 550 mV @ 3 A | |
|
SF65G B0GDIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation |
2,897 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A | |
|
FR156G B0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,966 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
SFAF2002GHC0GDIODE GEN PURP 100V 20A ITO220AC Taiwan Semiconductor Corporation |
3,138 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 20A | -55°C ~ 150°C | 975 mV @ 20 A |
|
SR1504HB0GDIODE SCHOTTKY 40V 15A R-6 Taiwan Semiconductor Corporation |
3,792 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 15A | -50°C ~ 150°C | 550 mV @ 15 A |
|
|
SK32AHM2GDIODE SCHOTTKY 20V 3A DO214AC Taiwan Semiconductor Corporation |
3,545 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 150°C | 550 mV @ 3 A |
|
SF65GHB0GDIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation |
2,351 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A |
|
FR156GHB0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,117 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
SFAF2003G C0GDIODE GEN PURP 150V 20A ITO220AC Taiwan Semiconductor Corporation |
2,536 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 975 mV @ 20 A | |
|
SR202 B0GDIODE SCHOTTKY 20V 2A DO204AC Taiwan Semiconductor Corporation |
3,326 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 2A | -55°C ~ 125°C | 550 mV @ 2 A | |
|
SK32B M4GDIODE SCHOTTKY 20V 3A DO214AA Taiwan Semiconductor Corporation |
3,021 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
SF66G B0GDIODE GEN PURP 400V 6A DO201AD Taiwan Semiconductor Corporation |
3,129 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A |