| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SE20FD-M3/IDIODE GEN PURP 200V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
3,645 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 200 V | 200 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
PR1004G-TDIODE GEN PURP 400V 1A DO41 Diodes Incorporated |
3,841 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | |
|
BYS10-35-E3/TR3DIODE SCHOTTKY 35V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,270 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 35 V | 35 V | 1.5A | -65°C ~ 150°C | 500 mV @ 1 A | |
|
|
BAT54SWFDIODE SCHOTTKY 30V 200MA SC70 Nexperia USA Inc. |
3,825 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA |
|
NRVUA120VT3GDIODE GEN PURP 200V 2A SMA onsemi |
2,317 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 1A (DC) | -65°C ~ 175°C | 875 mV @ 1 A |
|
TSS54L RWGDIODE SCHOTTKY 30V 200MA 1005 Taiwan Semiconductor Corporation |
2,108 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA | -65°C ~ 125°C | 1 V @ 100 mA | |
|
SE20FG-M3/HDIODE GEN PURP 400V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
3,589 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 400 V | 400 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
RGP10BDIODE GEN PURP 100V 1A DO204AL onsemi |
40,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
RMPG06K-E3/73DIODE GPP 1A 800V 250NS MPG06 Vishay General Semiconductor - Diodes Division |
3,620 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 250 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
MMBD4448WTRDIODE GEN PURP 75V 250MA SOT323 SMC Diode Solutions |
3,335 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | - | 2.5 µA @ 75 V | 75 V | 250mA | -65°C ~ 150°C | 1 V @ 100 mA | |
|
CMR3U-04 TR13 PBFREEDIODE GEN PURP 400V 3A SMC Central Semiconductor Corp |
3,814 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A | |
|
TSS70L RWGDIODE SCHOTTKY 70V 70MA 1005 Taiwan Semiconductor Corporation |
3,065 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 5 ns | 100 nA @ 50 V | 70 V | 70mA | -65°C ~ 125°C | 1 V @ 15 mA | |
|
SE20FG-M3/IDIODE GEN PURP 400V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
3,882 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 400 V | 400 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
|
S1KLW RVGDIODE GEN PURP 800V 1A SOD123W Taiwan Semiconductor Corporation |
2,217 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
HER105G R0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,437 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
LL4154-GS18DIODE GEN PURP 35V 300MA SOD80 Vishay General Semiconductor - Diodes Division |
2,537 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 100 nA @ 25 V | 35 V | 300mA | 175°C (Max) | 1 V @ 30 mA |
|
TSS70U RGGDIODE SCHOTTKY 70V 70MA 0603 Taiwan Semiconductor Corporation |
2,371 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 5 ns | 100 nA @ 25 V | 70 V | 70mA | -65°C ~ 125°C | 1 V @ 15 mA | |
|
SE20FJ-M3/IDIODE GEN PURP 600V 1.7A DO219AB Vishay General Semiconductor - Diodes Division |
2,245 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 920 ns | 5 µA @ 600 V | 600 V | 1.7A | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
|
UF4001-GDIODE GEN PURP 50V 1A DO41 Comchip Technology |
2,112 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
BYG21M M2GDIODE AVALANCHE 1.5A DO214AC Taiwan Semiconductor Corporation |
3,824 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 13pF @ 4V, 1MHz | 120 ns | 1 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A |