| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS19-E3-18DIODE GEN PURP 100V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,668 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
HER108G R0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
3,593 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
ES2DWF-HFRECTIFIER SUPER FAST RECOVERY 20 Comchip Technology |
2,962 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
SF2L8GHR0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,032 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
SCS220AECDIODE SILICON 650V 20A TO247 Rohm Semiconductor |
3,274 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 730pF @ 1V, 1MHz | 0 ns | 400 µA @ 600 V | 650 V | 20A | 175°C (Max) | 1.55 V @ 20 A | |
|
MUR160A R0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,273 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A | |
|
BAS20-E3-08DIODE GEN PURP 150V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,544 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
UF1D R0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,899 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
RS2MB-HFRECTIFIER FAST RECOVERY 1000V 2A Comchip Technology |
3,864 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | ||
|
SS2FL3HM3/IDIODE SCHOTTKY 30V 2A DO-219AB Vishay General Semiconductor - Diodes Division |
2,625 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 540 mV @ 2 A |
|
NTE5824R-1000V 12A FAST RECOVERY NTE Electronics, Inc |
3,129 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 400 ns | 25 µA @ 1000 V | 1000 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
CDBB160-GDIODE SCHOTTKY 60V 1A DO214AA Comchip Technology |
2,326 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 1A | 125°C (Max) | 700 mV @ 1 A | |
|
PMEG3001EEFZPMEG3001EEF/SOD972/DFN0603 Nexperia USA Inc. |
3,530 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 4pF @ 1V, 1MHz | 1.5 ns | 300 nA @ 10 V | 30 V | 100mA | 150°C (Max) | 460 mV @ 10 mA | |
|
UF1G R0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,775 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
ES2BWF-HFRECTIFIER SUPER FAST RECOVERY 10 Comchip Technology |
2,288 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
SS2FL4HM3/IDIODE SCHOTTKY 40V 2A DO-219AB Vishay General Semiconductor - Diodes Division |
2,112 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 125pF @ 4V, 1MHz | - | 220 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 580 mV @ 2 A |
|
NTE5915R-100PRV 20A ANODE CASE NTE Electronics, Inc |
3,778 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 12 mA @ 100 V | 100 V | 20A | -65°C ~ 175°C | 1.23 V @ 63 A | |
|
ER2B-LTPDIODE GEN PURP 100V 2A DO214AA Micro Commercial Co |
3,698 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A | |
|
BAS116 RFGDIODE GEN PURP 75V 200MA SOT23 Taiwan Semiconductor Corporation |
2,151 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 3 ns | 5 nA @ 75 V | 75 V | 200mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
UF1J R0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,665 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |