| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
D3041N58TXPSA1DIODE GEN PURP 5.8KV 4090A Infineon Technologies |
2,864 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 100 mA @ 5800 V | 5800 V | 4090A | -40°C ~ 160°C | 1.7 V @ 4000 A | |
|
CUS10I40A(TE85L,QMDIODE SCHOTTKY 40V 1A US-FLAT Toshiba Semiconductor and Storage |
3,540 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 35pF @ 10V, 1MHz | - | 60 µA @ 40 V | 40 V | 1A | 150°C (Max) | 490 mV @ 700 mA | |
|
BYV29G-600PQDIODE GEN PURP 600V 9A I2PAK WeEn Semiconductors |
3,105 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 9A | 175°C (Max) | 1.3 V @ 8 A | |
|
1N4935GHR0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,908 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
1N5402GHA0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,223 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
JANTXV1N6677-1RECTIFIER Microchip Technology |
3,391 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/610 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 5 µA @ 40 V | 40 V | 200mA | -65°C ~ 150°C | 700 mV @ 630 mA | |
|
D405N26EXPSA1RECTIFIER DIODE DISC Infineon Technologies |
3,288 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
CUS15I30A(TE85L,QMDIODE SCHOTTKY 30V 1.5A US-FLAT Toshiba Semiconductor and Storage |
2,266 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 50pF @ 10V, 1MHz | - | 60 µA @ 30 V | 30 V | 1.5A | 150°C (Max) | 460 mV @ 1.5 A | |
|
BYV29X-600PQDIODE GEN PURP 600V 9A TO220F WeEn Semiconductors |
3,464 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 9A | 175°C (Max) | 1.3 V @ 8 A | |
|
FR101G R0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,524 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
1N5404G A0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
2,228 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
JANTXV1N6762RECTIFIER Microchip Technology |
3,566 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 5V, 1MHz | 35 ns | 10 µA @ 200 V | 50 V | 12A (DC) | - | 1.05 V @ 12 A | ||
|
D801S45TDIODE GEN PURP 4.5KV 1570A Infineon Technologies |
3,147 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 250 mA @ 4500 V | 4500 V | 1570A | -40°C ~ 125°C | 3.7 V @ 2500 A | |
|
BYC30W-1200PQDIODE GEN PURP 1.2KV 30A TO247-2 WeEn Semiconductors |
3,037 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 250 µA @ 1200 V | 1200 V | 30A | 175°C (Max) | 3.3 V @ 30 A | |
|
APD240KDTR-G1DIODE SCHOTTKY 40V 2A SOD123 Diodes Incorporated |
3,743 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 2A | -65°C ~ 125°C | 500 mV @ 2 A | |
|
FR102G R0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,604 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
1N5404GHA0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
2,793 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
JANTXV1N6762RRECTIFIER Microchip Technology |
3,154 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 5V, 1MHz | 35 ns | 10 µA @ 200 V | 50 V | 12A (DC) | - | 1.05 V @ 12 A | ||
|
D170S25CXPSA1DIODE GEN PURP 2.5KV 255A Infineon Technologies |
3,388 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Stud Mount | - | - | 5 mA @ 2500 V | 2500 V | 255A | -40°C ~ 140°C | 2.3 V @ 800 A | |
|
SK8DJDIODE GEN PURP 800V 8A DPAK WeEn Semiconductors |
3,480 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 8A | 150°C (Max) | 1.1 V @ 8 A |