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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EU 2VDIODE GEN PURP 400V 1A AXIAL Sanken |
2,331 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
ES2FHE3_A/HDIODE GEN PURP 300V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,371 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 300 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
ES3FHDIODE GEN PURP 300V 3A DO214AB Taiwan Semiconductor Corporation |
3,866 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
CDBMHT140-HFDIODE SCHOTTKY 40V 1A SOD123T Comchip Technology |
3,214 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A (DC) | -55°C ~ 125°C | 500 mV @ 1 A | |
|
|
S5MB-HFRECTIFIER GEN PURP 1000V 5A SMB Comchip Technology |
2,474 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 5A | -55°C ~ 150°C | 1.1 V @ 5 A | ||
|
|
SS33HDIODE SCHOTTKY 30V 3A DO214AB Taiwan Semiconductor Corporation |
2,726 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
ES2FHE3_A/IDIODE GEN PURP 300V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,209 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 300 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
SBYV28-150-E3/54DIODE GEN PURP 150V 3.5A DO201AD Vishay General Semiconductor - Diodes Division |
2,866 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 20 ns | 5 µA @ 150 V | 150 V | 3.5A | -55°C ~ 150°C | 1.1 V @ 3.5 A | |
|
|
CDBMHT160-HFDIODE SCHOTTKY 60V 1A SOD123T Comchip Technology |
3,702 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 1A (DC) | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
S5DB-HFRECTIFIER GEN PURP 200V 5A SMB Comchip Technology |
3,915 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 1.1 V @ 5 A | ||
|
|
SS34HDIODE GEN PURP 40V 3A DO214AB Taiwan Semiconductor Corporation |
2,466 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
ES2GHE3_A/IDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,587 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 400 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
|
UG4A-E3/54DIODE GEN PURP 50V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,535 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
JANTX1N6858-1/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,822 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/444 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 4.5pF @ 0V, 1MHz | - | 200 nA @ 50 V | 50 V | 75mA | -65°C ~ 150°C | 1 V @ 35 mA | |
|
|
RB530S-30FHTE61DIODE SCHOTTKY SMD Rohm Semiconductor |
3,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
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|
1N4944-APDIODE GPP FAST 1A DO-41 Micro Commercial Co |
2,534 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | - | 400 V | 1A | -55°C ~ 150°C | - | |
|
|
CMF01A,LQ(MMOSFET N-CH Toshiba Semiconductor and Storage |
3,672 | - |
RFQ |
Datasheet |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 50 µA @ 600 V | 600 V | 2A | 150°C | 2 V @ 2 A | |
|
HER208-TPDIODE GPP HE 2A DO-15 Micro Commercial Co |
2,756 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | 75 ns | - | 1000 V | 2A | -55°C ~ 150°C | - | |
|
SFT17GDIODE GEN PURP 1A 500V TS-1 Taiwan Semiconductor Corporation |
2,766 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A (DC) | -55°C ~ 150°C | 1.7 V @ 1 A | ||
|
JANHCA1N5298CURRENT REGULATOR Microchip Technology |
3,562 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 1.21A | -65°C ~ 175°C | 1.4 V @ 880 mA |
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