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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NRVBS210FA100V 2A SCHOTTKY RECTI onsemi |
3,029 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 62pF @ 4V, 1MHz | 7 ns | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
|
AU3PD-M3/87ADIODE AVALANCHE 200V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
2,785 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 200 V | 200 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
FR1004GP-TPDIODE GPP FAST 10A R-6 Micro Commercial Co |
2,835 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | - | 400 V | 10A | -55°C ~ 150°C | - | |
|
|
AU01V1DIODE GEN PURP 400V 500MA AXIAL Sanken |
3,821 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 500mA | -40°C ~ 150°C | 1.7 V @ 500 mA | |
|
SF65G R0GDIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation |
2,602 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A | |
|
LSR104 L0GDIODE SCHOTTKY 40V 1A MELF Taiwan Semiconductor Corporation |
3,546 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 550 mV @ 1 A | |
|
|
CMF01(TE12L,Q,M)DIODE GEN PURP 600V 2A MFLAT Toshiba Semiconductor and Storage |
3,925 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | 100 ns | 50 µA @ 600 V | 600 V | 2A | -40°C ~ 150°C | 2 V @ 2 A | |
|
|
AU3PG-M3/87ADIODE AVALANCHE 400V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
2,984 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 400 V | 400 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
|
AU01WKDIODE GEN PURP 400V 500MA AXIAL Sanken |
3,148 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 500mA | -40°C ~ 150°C | 1.7 V @ 500 mA | |
|
|
FR1005GP-TPDIODE GPP FAST 10A R-6 Micro Commercial Co |
2,788 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | - | 600 V | 10A | -55°C ~ 150°C | - | |
|
|
SF66G R0GDIODE GEN PURP 400V 6A DO201AD Taiwan Semiconductor Corporation |
2,497 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A | |
|
SK515B M4GDIODE SCHOTTKY 150V 5A DO214AA Taiwan Semiconductor Corporation |
2,118 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 950 mV @ 5 A | |
|
SB250-E3/73DIODE SCHOTTKY 2A 50V DO-41 Vishay General Semiconductor - Diodes Division |
3,101 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 50 V | 2A | -65°C ~ 150°C | 680 mV @ 2 A | |
|
|
AU3PJ-M3/86ADIODE AVALANCHE 600V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
3,151 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
|
AU01WSDIODE GEN PURP 400V 500MA AXIAL Sanken |
2,452 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 500mA | -40°C ~ 150°C | 1.7 V @ 500 mA | |
|
|
FR1006GP-TPDIODE GPP FAST 10A R-6 Micro Commercial Co |
2,806 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 500 ns | - | 800 V | 10A | -55°C ~ 150°C | - | |
|
|
SF68G R0GDIODE GEN PURP 600V 6A DO201AD Taiwan Semiconductor Corporation |
2,676 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1.7 V @ 6 A | |
|
MURS140HE3_A/HDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,961 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
|
ESH1BHE3_A/HDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,778 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
|
|
AU3PD-M3/86ADIODE AVALANCHE 200V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
3,005 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 200 V | 200 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
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