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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRB1090-E3/8WDIODE SCHOTTKY 90V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,931 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
FCH10A15DIODE SCHOTTKY 150V 10A TO-220 F KYOCERA AVX |
2,562 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 150 V | 150 V | 10A | -40°C ~ 150°C | 880 mV @ 5 A | |
|
SURS8360T3GDIODE GEN PURP 600V 3A SMC onsemi |
1,097,076 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A | |
|
UH3CHE3_A/HDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,018 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 1.05 V @ 3 A |
|
BYW84-TAPDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,405 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
|
VS-10ETF04STRR-M3DIODE GEN PURP 400V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,969 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 480 V | 400 V | 10A | - | 1.2 V @ 10 A | |
|
V20150SG-M3/4WDIODE SCHOTTKY 20A 150V TO-220AB Vishay General Semiconductor - Diodes Division |
3,632 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A | |
|
|
FCHS30A12DIODE SCHOTTKY 120V 30A TO-220 F KYOCERA AVX |
2,252 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 900 mV @ 15 A | |
|
SB380-TDIODE SCHOTTKY 80V 3A DO201AD Diodes Incorporated |
2,365 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 80 V | 80 V | 3A | -65°C ~ 150°C | 790 mV @ 3 A | |
|
|
EG1ADIODE GEN PURP 600V 600MA AXIAL Sanken |
3,067 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 100 µA @ 600 V | 600 V | 600mA | -40°C ~ 150°C | 2 V @ 600 mA | |
|
|
BYM36E-TRDIODE AVALANCHE 1KV 1.5A SOD64 Vishay General Semiconductor - Diodes Division |
2,241 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 150 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 175°C | 1.78 V @ 3 A | |
|
|
VS-10ETF06STRR-M3DIODE GEN PURP 600V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,005 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
VS-20TQ035-M3DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division |
3,302 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 730 mV @ 40 A | |
|
|
FCHS10A12DIODE SCHOTTKY 120V 10A TO-220 F KYOCERA AVX |
2,495 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 120 V | 120 V | 10A | -40°C ~ 150°C | 860 mV @ 10 A | |
|
|
CMS16(TE12L,Q,M)DIODE SCHOTTKY 40V 3A MFLAT Toshiba Semiconductor and Storage |
2,568 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 3A | -40°C ~ 150°C | 550 mV @ 3 A | |
|
|
EG01DIODE GEN PURP 400V 700MA AXIAL Sanken |
3,354 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 50 µA @ 400 V | 400 V | 700mA | -40°C ~ 150°C | 2 V @ 700 mA | |
|
|
BYT56K-TRDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,067 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
|
VS-10ETF10STRL-M3DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,273 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
VS-20TQ040-M3DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division |
3,163 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 40 V | 40 V | 20A | -55°C ~ 150°C | 730 mV @ 40 A | |
|
|
FRQS20A045DIODE SCHOTTKY 45V 20A TO-220 FU KYOCERA AVX |
3,995 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 600 µA @ 45 V | 45 V | 20A | -40°C ~ 150°C | 570 mV @ 20 A |
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