| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S1AFG-M3/6ADIODE GEN PURP 400V 1A DO221AC Vishay General Semiconductor - Diodes Division |
2,893 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.9pF @ 4V, 1MHz | 1.47 µs | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
SBE002-TL-WDIODE SCHOTTKY 50V 1A 6CPH onsemi |
2,129 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 52pF @ 10V, 1MHz | 10 ns | 80 µA @ 25 V | 50 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
S1AFG-M3/6BDIODE GEN PURP 400V 1A DO221AC Vishay General Semiconductor - Diodes Division |
3,967 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.9pF @ 4V, 1MHz | 1.47 µs | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
RGF1G-E3/5CA1A 400V 150NS FS. SUPERECT SMD Vishay General Semiconductor - Diodes Division |
3,448 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 150 ns | 5 µA @ 1700 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
S1AFJ-M3/6ADIODE GEN PURP 600V 1A DO221AC Vishay General Semiconductor - Diodes Division |
3,337 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.9pF @ 4V, 1MHz | 1.47 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
HS1KL RUGDIODE GEN PURP 800V 1A SUB SMA Taiwan Semiconductor Corporation |
2,341 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
S1AFJ-M3/6BDIODE GEN PURP 600V 1A DO221AC Vishay General Semiconductor - Diodes Division |
3,696 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.9pF @ 4V, 1MHz | 1.47 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
HER3L05G50NS, 3A, 400V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
3,457 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 54pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 3A (DC) | -55°C ~ 150°C | 1.32 V @ 3 A | ||
|
S1AFK-M3/6ADIODE GEN PURP 800V 1A DO221AC Vishay General Semiconductor - Diodes Division |
2,195 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.9pF @ 4V, 1MHz | 1.47 µs | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
HER3L03G50NS, 3A, 200V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
2,604 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 54pF @ 4V, 1MHz | 50 ns | 3 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | ||
|
S1AFK-M3/6BDIODE GEN PURP 800V 1A DO221AC Vishay General Semiconductor - Diodes Division |
2,436 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.9pF @ 4V, 1MHz | 1.47 µs | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
6A100GHR0GDIODE GEN PURP 6A R-6 Taiwan Semiconductor Corporation |
2,367 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
S1AFM-M3/6BDIODE GEN PURP 1KV 1A DO221AC Vishay General Semiconductor - Diodes Division |
2,530 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.9pF @ 4V, 1MHz | 1.47 µs | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
6A40GHR0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
3,546 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
S2DHM4GDIODE GEN PURP 200V 2A DO214AA Taiwan Semiconductor Corporation |
2,140 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A |
|
6A60GHR0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
2,065 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
S2GHM4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
3,901 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A |
|
6A80GHR0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
3,313 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
S2JHM4GDIODE GEN PURP 600V 2A DO214AA Taiwan Semiconductor Corporation |
2,863 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A |
|
CMR3-04 BK PBFREEDIODE GEN PURP 400V 3A SMC Central Semiconductor Corp |
2,375 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.2 V @ 3 A |