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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AR3PJ-M3/86ADIODE AVALANCHE 600V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
2,340 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 44pF @ 4V, 1MHz | 140 ns | 10 µA @ 600 V | 600 V | 1.8A (DC) | -55°C ~ 175°C | 1.6 V @ 3 A |
|
MUR160SHM4GDIODE GEN PURP 600V 1A DO214AA Taiwan Semiconductor Corporation |
2,201 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
|
AR3PG-M3/86ADIODE AVALANCHE 400V 1.8A TO277A Vishay General Semiconductor - Diodes Division |
3,986 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 44pF @ 4V, 1MHz | 140 ns | 10 µA @ 400 V | 400 V | 1.8A (DC) | -55°C ~ 175°C | 1.6 V @ 3 A |
|
VS-MBRS130-M3/5BTDIODE SCHOTTKY 30V 1A SMB Vishay General Semiconductor - Diodes Division |
3,326 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 5V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 420 mV @ 1 A | |
|
S5BDIODE GEN PURP 100V 5A DO214AB Taiwan Semiconductor Corporation |
2,674 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
|
SK315B M4GDIODE SCHOTTKY 150V 3A DO214AA Taiwan Semiconductor Corporation |
3,388 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
S15MCDIODE GEN PURP 1KV 15A DO214AB Taiwan Semiconductor Corporation |
2,922 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 93pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 15A (DC) | -55°C ~ 150°C | 1.1 V @ 15 A | ||
|
RMPG06DHE3_A/73DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,444 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
S15KCDIODE GEN PURP 800V 15A DO214AB Taiwan Semiconductor Corporation |
3,453 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 93pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 15A (DC) | -55°C ~ 150°C | 1.1 V @ 15 A | ||
|
|
RMPG06GHE3_A/73DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,934 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
S15JCDIODE GEN PURP 600V 15A DO214AB Taiwan Semiconductor Corporation |
3,311 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 93pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 15A (DC) | -55°C ~ 150°C | 1.1 V @ 15 A | ||
|
|
RMPG06JHE3_A/73DIODE GEN PURP 600V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
Datasheet |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
S15GCDIODE GEN PURP 400V 15A DO214AB Taiwan Semiconductor Corporation |
3,827 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 93pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 15A (DC) | -55°C ~ 150°C | 1.1 V @ 15 A | ||
|
|
SK13B M4GDIODE SCHOTTKY 30V 1A DO214AA Taiwan Semiconductor Corporation |
2,877 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
RG 10AVDIODE GEN PURP 600V 1A AXIAL Sanken |
2,908 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 500 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 2 V @ 1 A | |
|
|
SK14B M4GDIODE SCHOTTKY 40V 1A DO214AA Taiwan Semiconductor Corporation |
3,906 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
|
RG 2AVDIODE GEN PURP 600V 1A AXIAL Sanken |
2,808 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 500 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 2 V @ 1 A | |
|
|
SK16B M4GDIODE SCHOTTKY 60V 1A DO214AA Taiwan Semiconductor Corporation |
2,322 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
|
RM 10BVDIODE GEN PURP 800V 1.2A AXIAL Sanken |
3,187 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |
|
|
CMG05(TE12L,Q,M)DIODE GEN PURP 400V 1A M-FLAT Toshiba Semiconductor and Storage |
2,969 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.1 V @ 1 A |
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