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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3267RSTANDARD RECTIFIER Microchip Technology |
3,719 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
JANS1N5304UR-1/TRCURRENT REGULATOR Microchip Technology |
2,469 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - |
|
VS-HFA25TB60SL-M3DIODE GEN PURP 600V 25A D2PAK Vishay General Semiconductor - Diodes Division |
3,112 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 20 µA @ 600 V | 600 V | 25A (DC) | -55°C ~ 150°C | 2 V @ 50 A |
|
HS2KA R3GDIODE GEN PURP 800V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,836 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A | |
|
|
VS-HFA25TB60SR-M3DIODE GEN PURP 600V 25A D2PAK Vishay General Semiconductor - Diodes Division |
2,847 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 20 µA @ 600 V | 600 V | 25A (DC) | -55°C ~ 150°C | 2 V @ 50 A |
|
SF61G-TPDIODE GPP SUPER FAST 6A DO-201AD Micro Commercial Co |
3,726 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 120pF @ 4V, 1MHz | 35 ns | - | 50 V | 6A | -55°C ~ 150°C | - | |
|
SF2008PTHC0GDIODE GEN PURP 600V 20A TO247AD Taiwan Semiconductor Corporation |
2,087 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 20A | -55°C ~ 150°C | 1.9 V @ 20 A |
|
|
SF62G-TPDIODE GPP SUPER FAST 6A DO-201AD Micro Commercial Co |
3,259 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 120pF @ 4V, 1MHz | 35 ns | - | 100 V | 6A | -55°C ~ 150°C | - | |
|
|
DSA15IM200UC-TUBPOWER DIODE DISCRETES-SCHOTTKY T IXYS |
2,035 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 67pF @ 24V, 1MHz | - | 250 µA @ 200 V | 200 V | 15A | -55°C ~ 175°C | 940 mV @ 15 A | ||
|
|
SF63G-TPDIODE GPP SUPER FAST 6A DO-201AD Micro Commercial Co |
2,397 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 120pF @ 4V, 1MHz | 35 ns | - | 150 V | 6A | -55°C ~ 150°C | - | |
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|
LSM835J/TR13DIODE SCHOTTKY 35V 8A DO214AB Microchip Technology |
3,878 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 35 V | 35 V | 8A | -55°C ~ 150°C | 520 mV @ 8 A | |
|
|
SF64G-TPDIODE GPP SUPER FAST 6A DO-201AD Micro Commercial Co |
2,202 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 120pF @ 4V, 1MHz | 35 ns | - | 200 V | 6A | -55°C ~ 150°C | - | |
|
|
LSM840J/TR13DIODE SCHOTTKY 40V 8A DO214AB Microchip Technology |
3,375 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 40 V | 40 V | 8A | -55°C ~ 150°C | 520 mV @ 8 A | |
|
|
SF66G-TPDIODE GPP SUPER FAST 6A DO-201AD Micro Commercial Co |
2,269 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 90pF @ 4V, 1MHz | 35 ns | - | 400 V | 6A | -55°C ~ 150°C | - | |
|
|
LSM845J/TR13DIODE SCHOTTKY 45V 8A DO214AB Microchip Technology |
3,222 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 8A | -55°C ~ 150°C | 520 mV @ 8 A | |
|
CDBB560-GDIODE SCHOTTKY 60V 5A DO214AA Comchip Technology |
3,301 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | 210pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 5A | -55°C ~ 125°C | 700 mV @ 5 A | |
|
|
1N646SILICON SWITCHING DIODES Microchip Technology |
2,838 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
CDBB560-HFDIODE SCHOTTKY 60V 5A DO214AA Comchip Technology |
2,290 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 210pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 5A | -55°C ~ 125°C | 700 mV @ 5 A | |
|
|
DMA10IM1200UZ-TUBPOWER DIODE DISCRETES-RECTIFIER IXYS |
2,933 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 400V, 1MHz | - | 10 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.26 V @ 10 A | |
|
CDBC2100LR-HFDIODE SCHOTTKY 100V 2A DO214AB Comchip Technology |
3,794 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 30pF @ 4V, 1MHz | - | 500 µA @ 100 V | 100 V | 2A | -50°C ~ 150°C | 750 mV @ 2 A |
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