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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
D2201N45TXPSA1DIODE GEN PURP 4.5KV 3250A Infineon Technologies |
2,672 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 100 mA @ 4500 V | 4500 V | 3250A | -40°C ~ 140°C | 1.2 V @ 2500 A | |
|
VS-T85HFL20S05DIODE GEN PURP 200V 85A D-55 Vishay General Semiconductor - Diodes Division |
2,680 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 500 ns | 20 mA @ 200 V | 200 V | 85A | - | - | |
|
JANTX1N5814DIODE GEN PURP 100V 20A DO203AA Microchip Technology |
3,383 | - |
RFQ |
Datasheet |
Bulk | MILITARY, MIL-PRF-19500/478 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | 300pF @ 10V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 20A | -65°C ~ 175°C | 950 mV @ 20 A |
|
|
VS-SD600N22PCDIODE GEN PURP 2.2KV 600A B-8 Vishay General Semiconductor - Diodes Division |
2,876 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 2200 V | 600A | -40°C ~ 150°C | 1.44 V @ 1500 A | |
|
JANTXV1N5288UR-1/TRCURRENT REGULATOR Microchip Technology |
2,228 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - |
|
|
VS-SD500R36PTCMOD DIODE 560A 3600V B-PUK Vishay General Semiconductor - Diodes Division |
2,514 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
DHG55I3300FEPOWER DIODE DISCRETES-SONIC I4-P IXYS |
3,888 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 16pF @ 1.8kV, 1MHz | 1.65 µs | 100 µA @ 3300 V | 3300 V | 50A | -40°C ~ 150°C | 3.4 V @ 60 A | ||
|
|
W108CED180RECTIFIER DIODE IXYS |
3,895 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | - | 1800 V | 10815A | - | - | ||
|
|
VS-SD1100C32JDIODE GP 3.2KV 1100A B43 PUK Vishay General Semiconductor - Diodes Division |
3,813 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 3200 V | 1100A | -40°C ~ 150°C | 1.44 V @ 1500 A | |
|
|
SCFS2000DIODE GEN PURP 2KV 1.5A AXIAL Semtech Corporation |
3,381 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 2000 V | 2000 V | 1.5A | -55°C ~ 150°C | 5.4 V @ 3 A | |
|
|
JANTXV1N5299UR-1/TRCURRENT REGULATOR Microchip Technology |
3,464 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - |
|
|
SK54CHDIODE SCHOTTKY 40V 5A DO214AB Taiwan Semiconductor Corporation |
3,789 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A (DC) | -55°C ~ 150°C | 550 mV @ 5 A | |
|
JAN1N4153-1DIODE GEN PURP 75V 150MA DO35 Microchip Technology |
2,238 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/337 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | 4 ns | 50 nA @ 50 V | 75 V | 150mA (DC) | -65°C ~ 175°C | 880 mV @ 20 mA |
|
|
SK56CHDIODE SCHOTTKY 60V 5A DO214AB Taiwan Semiconductor Corporation |
3,824 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 5A (DC) | -55°C ~ 150°C | 750 mV @ 5 A | |
|
1N4942DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
2,407 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 12V, 1MHz | 150 ns | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | |
|
|
SK53CHDIODE SCHOTTKY 30V 5A DO214AB Taiwan Semiconductor Corporation |
2,563 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 5A (DC) | -55°C ~ 150°C | 550 mV @ 5 A | |
|
C6D10065G10A 650V SIC SCHOTTKY DIODE Wolfspeed, Inc. |
3,594 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 611pF @ 0V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 36A (DC) | -55°C ~ 175°C | 1.4 V @ 10 A | |
|
FFSB10120ADIODE SBD 10A 120V D2PAK-3 onsemi |
2,280 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 612pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 21A (DC) | -55°C ~ 175°C | 1.75 V @ 10 A | |
|
VS-60EPS08-M3DIODE GEN PURP 800V 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,617 | - |
RFQ |
Datasheet |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 800 V | 800 V | 60A | -40°C ~ 150°C | 1.09 V @ 60 A | |
|
|
1N3613DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
2,248 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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