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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6911UTK2CS/TRDIODE POWER SCHOTTKY Microchip Technology |
2,947 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | - | 1.2 mA @ 30 V | 30 V | 25A | -65°C ~ 150°C | 540 mV @ 25 A | ||
|
|
1N1341BSTANDARD RECTIFIER Microchip Technology |
2,810 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
V10P15-M3/HDIODE SCHOTTKY 150V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,935 | - |
RFQ |
Datasheet |
Tape & Box (TB) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | 10A | -40°C ~ 150°C | 1.08 V @ 10 A |
|
|
S12JDIODE GEN PURP 600V 12A DO4 GeneSiC Semiconductor |
3,758 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 600 V | 12A | -65°C ~ 175°C | 1.1 V @ 12 A | |
|
|
V10P15-M3/IDIODE SCHOTTKY 150V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,983 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | 10A | -40°C ~ 150°C | 1.08 V @ 10 A |
|
|
S12JRDIODE GEN PURP REV 600V 12A DO4 GeneSiC Semiconductor |
2,643 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 600 V | 12A | -65°C ~ 175°C | 1.1 V @ 12 A | |
|
|
CMS15(TE12L,Q,M)DIODE SCHOTTKY 60V 3A M-FLAT Toshiba Semiconductor and Storage |
3,264 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 102pF @ 10V, 1MHz | - | 300 µA @ 60 V | 60 V | 3A | -40°C ~ 150°C | 580 mV @ 3 A | |
|
|
S12KDIODE GEN PURP 800V 12A DO4 GeneSiC Semiconductor |
2,390 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 800 V | 12A | -65°C ~ 175°C | 1.1 V @ 12 A | |
|
|
VS-4ESH01HM3/87ADIODE GEN PURP 100V 4A TO277A Vishay General Semiconductor - Diodes Division |
2,158 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 4 V | 100 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
|
|
S12KRDIODE GEN PURP REV 800V 12A DO4 GeneSiC Semiconductor |
3,622 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 800 V | 12A | -65°C ~ 175°C | 1.1 V @ 12 A | |
|
|
VS-4ESH02HM3/87ADIODE GEN PURP 200V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,637 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
|
|
S12MDIODE GEN PURP 1000V 12A DO4 GeneSiC Semiconductor |
3,318 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1000 V | 12A | -65°C ~ 175°C | 1.1 V @ 12 A | |
|
NRVBM120ET1GDIODE SCHOTTKY 20V 1A POWERMITE onsemi |
65,872 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | POWERMITE® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 nA @ 5 V | 20 V | 1A | -65°C ~ 150°C | 595 mV @ 2 A |
|
|
S12MRDIODE GEN PURP REV 1KV 12A DO4 GeneSiC Semiconductor |
3,677 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1000 V | 12A | -65°C ~ 175°C | 1.1 V @ 12 A | |
|
EGP20CDIODE GEN PURP 150V 2A DO15 onsemi |
2,433 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A | |
|
S12QDIODE GEN PURP 1200V 12A DO4 GeneSiC Semiconductor |
3,134 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1200 V | 12A | -65°C ~ 175°C | 1.1 V @ 12 A | |
|
|
EG1DIODE GEN PURP 400V 800MA AXIAL Sanken |
2,371 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 50 µA @ 400 V | 400 V | 800mA | -40°C ~ 150°C | 1.8 V @ 800 mA | |
|
|
S12QRDIODE GEN PURP REV 1.2KV 12A DO4 GeneSiC Semiconductor |
2,452 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1200 V | 12A | -65°C ~ 175°C | 1.1 V @ 12 A | |
|
|
EM1ADIODE GEN PURP 600V 1A AXIAL Sanken |
3,149 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 970 mV @ 1 A | |
|
CDLL645DIODE GEN PURP 225V 400MA DO213 Microchip Technology |
2,387 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 225 V | 225 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA |
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