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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N6625E3/TRRECTIFIER UFR,FRR Microchip Technology |
3,305 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 80 ns | 1 µA @ 1 V | 1.1 V | 1A | -65°C ~ 150°C | 1.95 V @ 1.5 A | ||
|
UPR10E3/TR13DIODE GEN PURP 100V 2.5A DO216 Microchip Technology |
2,915 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 100 V | 100 V | 2.5A | -55°C ~ 150°C | 975 mV @ 2 A | |
|
JANTX1N6622US/TRRECTIFIER UFR,FRR Microchip Technology |
2,661 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 660 V | 660 V | 2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
|
UPR15E3/TR13DIODE GEN PURP 150V 2.5A DO216 Microchip Technology |
2,562 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 150 V | 150 V | 2.5A | -55°C ~ 150°C | 975 mV @ 2 A | |
|
S85VDIODE GEN PURP 1.4KV 85A DO5 GeneSiC Semiconductor |
2,824 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1400 V | 85A | -65°C ~ 150°C | 1.1 V @ 85 A | |
|
|
UPR5E3/TR13DIODE GEN PURP 50V 2.5A DO216 Microchip Technology |
2,436 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 50 V | 50 V | 2.5A | -55°C ~ 150°C | 975 mV @ 2 A | |
|
|
PF8DIODE GEN PURP 800V 850MA AXIAL Semtech Corporation |
3,709 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 18pF @ 5V, 1MHz | 300 ns | 1 µA @ 800 V | 800 V | 850mA | - | 1.35 V @ 1.5 A | |
|
6A20G6A, 200V, STANDARD RECOVERY RECT Taiwan Semiconductor Corporation |
3,237 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | ||
|
|
PF0DIODE GEN PURP 1KV 850MA AXIAL Semtech Corporation |
3,058 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 18pF @ 5V, 1MHz | 300 ns | 1 µA @ 1000 V | 1000 V | 850mA | - | 1.35 V @ 1.5 A | |
|
|
FCQS10A065DIODE SCHOTTKY 65V 10A TO-220 FU KYOCERA AVX |
3,576 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 400 µA @ 65 V | 65 V | 10A | -40°C ~ 150°C | 610 mV @ 5 A | |
|
|
PM6DIODE GEN PURP 600V 2A AXIAL Semtech Corporation |
2,709 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 18pF @ 4V, 1MHz | 3 µs | 1 mA @ 600 V | 600 V | 2A | - | 1 V @ 1 A | |
|
|
FCQS10A045DIODE SCHOTTKY 45V 10A TO-220 FU KYOCERA AVX |
2,817 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 45 V | 45 V | 10A | -40°C ~ 150°C | 570 mV @ 5 A | |
|
|
PM8DIODE GEN PURP 800V 1A AXIAL Semtech Corporation |
3,957 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 5V, 1MHz | 3 µs | 1 µA @ 800 V | 800 V | 1A | - | 2.1 V @ 1 A | |
|
|
FCHS10A08DIODE SCHOTTKY 85V 10A TO-220 FU KYOCERA AVX |
3,335 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 80 V | 80 V | 10A | -40°C ~ 150°C | 720 mV @ 5 A | |
|
VS-85HFLR100S05DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,803 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 100 V | 1000 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
|
FES16AT-E3/45DIODE GEN PURP 50V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,008 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
JANTX1N6629DIODE GEN PURP 880V 1.4A Microchip Technology |
3,634 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 50 ns | 2 µA @ 880 V | 880 V | 1.4A | -65°C ~ 150°C | 1.4 V @ 1.4 A |
|
|
FES16CT-E3/45DIODE GEN PURP 150V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,147 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
|
JANTX1N6630RECTIFIER Microchip Technology |
3,832 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 50 ns | 2 µA @ 990 V | 900 V | 3A | -65°C ~ 175°C | 1.7 V @ 3 A | |
|
VS-15AWL06FNTRL-M3DIODE GEN PURP 600V 15A D-PAK Vishay General Semiconductor - Diodes Division |
2,720 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 120 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
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