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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-SD600N16PCDIODE GEN PURP 1.6KV 600A B8 Vishay General Semiconductor - Diodes Division |
3,370 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 1600 V | 1600 V | 600A | -40°C ~ 180°C | 1.31 V @ 1500 A | |
|
JANTXV1N6623UDIODE GEN PURP 800V 1A A-MELF Microchip Technology |
2,334 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 500 nA @ 800 V | 800 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
|
VS-SD600R08PCDIODE GEN PURP 800V 600A B8 Vishay General Semiconductor - Diodes Division |
3,560 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 800 V | 800 V | 600A | -40°C ~ 190°C | 1.31 V @ 1500 A | |
|
|
JANTXV1N6624UDIODE GEN PURP 900V 1A A-MELF Microchip Technology |
2,799 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 500 nA @ 900 V | 900 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
|
VS-SD600R12PCDIODE GEN PURP 1.2KV 600A B8 Vishay General Semiconductor - Diodes Division |
3,316 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 1200 V | 1200 V | 600A | -40°C ~ 180°C | 1.31 V @ 1500 A | |
|
|
JANTX1N6626UDIODE GEN PURP 200V 1.75A A-MELF Microchip Technology |
2,183 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 200 V | 200 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
|
VS-SD600R16PCDIODE GEN PURP 1.6KV 600A B8 Vishay General Semiconductor - Diodes Division |
2,968 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 35 mA @ 1600 V | 1600 V | 600A | -40°C ~ 180°C | 1.31 V @ 1500 A | |
|
|
JANTX1N6627UDIODE GEN PURP 400V 1.75A E-MELF Microchip Technology |
2,291 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 400 V | 400 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
FFH30S60STUDIODE GEN PURP 600V 30A TO247-2 onsemi |
1,914 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 100 µA @ 600 V | 600 V | 30A | -65°C ~ 150°C | 2.6 V @ 30 A | |
|
1N5408GDIODE GEN PURP 1000V 3A DO201AD onsemi |
2,219 | - |
RFQ |
Datasheet |
Bulk,Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 1000 V | 1000 V | 3A | -65°C ~ 150°C | 1 V @ 3 A | |
|
APT60S20BGDIODE SCHOTTKY 200V 75A TO247 Microchip Technology |
1,380 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | 55 ns | 1 mA @ 200 V | 200 V | 75A | -55°C ~ 150°C | 900 mV @ 60 A | |
|
CMR1U-10M TR13 PBFREEDIODE GEN PURP 1KV 1A SMA Central Semiconductor Corp |
28,144 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.7 V @ 1 A | |
|
PMEG4010ET,215DIODE SCHOTTKY 40V 1A TO236AB Nexperia USA Inc. |
101,383 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 1V, 1MHz | - | 100 µA @ 40 V | 40 V | 1A (DC) | 150°C (Max) | 640 mV @ 1 A | |
|
VS-8EWF06S-M3DIODE GEN PURP 600V 8A TO252AA Vishay General Semiconductor - Diodes Division |
3,145 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 100 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
PDS560-13DIODE SCHOTTKY 60V 5A POWERDI5 Diodes Incorporated |
126,213 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 60 V | 60 V | 5A | -65°C ~ 150°C | 670 mV @ 5 A | |
|
CMDSH05-45 TR PBFREEDIODE SCHOTTKY 45V 500MA SOD323 Central Semiconductor Corp |
535,504 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 1V, 1MHz | - | 100 µA @ 30 V | 45 V | 500mA | -65°C ~ 150°C | 470 mV @ 500 mA | |
|
IDL12G65C5XUMA2DIODE SCHOTTKY 650V 12A VSON-4 Infineon Technologies |
7,690 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 360pF @ 1V, 1MHz | 0 ns | 190 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 150°C | 1.7 V @ 12 A |
|
|
JANTXV1N6843U3SCHOTTKY DIODE Microchip Technology |
2,551 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
UES1002/TRRECTIFIER UFR,FRR Microchip Technology |
3,881 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 2 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 975 mV @ 1 A | ||
|
|
PDS1040L-13DIODE SCHOTTKY 40V 10A POWERDI5 Diodes Incorporated |
67,354 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 40 V | 40 V | 10A | -65°C ~ 150°C | 490 mV @ 10 A |
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