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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N1676RDO9 275 AMP SILICON RECTIFIER Solid State Inc. |
2,513 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 75 µA @ 500 V | 500 V | 275A | -65°C ~ 190°C | 1.3 V @ 300 A | |
|
CPW3-1700-S025B-WPDIODE SILICON 1.7KV 25A CHIP Wolfspeed, Inc. |
3,031 | - |
RFQ |
Tray | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 2250pF @ 0V, 1MHz | 0 ns | 100 µA @ 1700 V | 1700 V | 25A | -55°C ~ 175°C | 2 V @ 25 A | |
|
BAS21-F2-0000HFDIODE GEN PURP 250V 200MA SOT23 Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,140 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 250 V | 250 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 100 mA | |
|
JAN1N5712UBSCHOTTKY DIODE Microchip Technology |
3,451 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | - | - | - | 150°C (Max) | 1 V @ 35 mA | |
|
BAV21W-F2-0000HFDIODE GEN PURP 250V 200MA SOD123 Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,838 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 200mA | -65°C ~ 150°C | 1.25 V @ 200 mA | |
|
1N6079/TRRECTIFIER UFR,FRR Microchip Technology |
3,836 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 50 V | 50 V | 2A | -65°C ~ 155°C | 1.5 V @ 37.7 A | |
|
BAS316-F2-0000HFDIODE GEN PURP 100V 250MA SOD323 Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,665 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 100 V | 250mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
|
JAN1N5283-1DIODE REG 0.5W DO-7 Microchip Technology |
3,816 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - |
|
G1G-F1-0000HFDIODE GEN PURP 400V 1A SOD123FL Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,085 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 1700 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
JAN1N5284-1DIODE CURRENT REG 100V Microchip Technology |
3,979 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - |
|
|
BAT42W-F2-0000HFDIODE SCHOTTKY 30V 200MA SOD123 Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,640 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 20pF @ 1V, 1MHz | - | 500 nA @ 25 V | 30 V | 200mA | 125°C (Max) | 1 V @ 200 mA | |
|
|
JAN1N5286-1DIODE CURRENT REG 100V Microchip Technology |
3,261 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - |
|
|
BAS16W-F2-0000HFDIODE GEN PURP 75V 200MA SOD123 Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,388 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 75 V | 200mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
|
JAN1N5287-1DIODE CURRENT REG 100V Microchip Technology |
2,154 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - |
|
F2MF-F1-0000HFDIODE GEN PURP 1000V 2A SMAF Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,607 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 500 ns | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
JAN1N5289-1DIODE CURRENT REG 100V Microchip Technology |
3,574 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - |
|
|
PMEG4015EPK,315PMEG4015EPK - 40 V, 1.5 A LOW VF Rochester Electronics, LLC |
3,047 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 1V, 1MHz | 4 ns | 5 µA @ 10 V | 40 V | 1.5A | 150°C (Max) | 610 mV @ 1.5 A | |
|
1N249RADO5 20 AMP SILICON RECTIFIER Solid State Inc. |
3,619 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 10 µA @ 100 V | 100 V | 40A | -65°C ~ 200°C | 1.19 V @ 90 A | ||
|
|
R9G01812XXDIODE GP 1.8KV 1200A DO200AB Powerex Inc. |
3,000 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 25 µs | 150 mA @ 1800 V | 1800 V | 1200A | - | 1.45 V @ 1500 A | |
|
SCS105KGCDIODE SCHOTTKY 1.2KV 5A TO220AC Rohm Semiconductor |
2,145 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 325pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 5A (DC) | 175°C (Max) | 1.75 V @ 5 A |
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