| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTSV20100CTHRECTIFIER DIODE, SCHOTTKY, 1 PHA Rochester Electronics, LLC |
2,154 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
VS-T85HFL80S05DIODE GEN PURP 800V 85A D-55 Vishay General Semiconductor - Diodes Division |
2,307 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 500 ns | 20 mA @ 800 V | 800 V | 85A | - | - | |
|
ES2J-AQSF Rect, 600V, 2.00A, 35ns DComponents |
3,072 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 600 V | 600 V | 2A | -50°C ~ 150°C | 1.7 V @ 2 A | |
|
JANS1N6642UBSWITCHING DIODE WEC |
2,198 | - |
RFQ |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 5 ns | - | - | - | - | 1.2 V @ 100 mA | ||
|
SK56SchottkyD, 60V, 5A DComponents |
2,442 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 5A | -50°C ~ 150°C | 680 mV @ 5 A | |
|
JANS1N6642UB/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,994 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 5 ns | - | - | - | - | 1.2 V @ 100 mA | ||
|
ER3BSF Rect, 100V, 3.00A, 35ns DComponents |
3,642 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 100 V | 100 V | 3A | -50°C ~ 150°C | 1 V @ 3 A | |
|
UES1304SMRECTIFIER Microchip Technology |
3,231 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | - | 200 V | 5A | - | 1.25 V @ 3 A | ||
|
ER3ASF Rect, 50V, 3.00A, 35ns DComponents |
3,226 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 50 V | 50 V | 3A | -50°C ~ 150°C | 1 V @ 3 A | |
|
UES1305SMRECTIFIER Microchip Technology |
2,439 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
1N4052DO9 275 AMP SILICON RECTIFIER Solid State Inc. |
3,306 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 75 µA @ 600 V | 600 V | 275A | -65°C ~ 190°C | 1.3 V @ 300 A | |
|
SCS120AGCDIODE SCHOTTKY 600V 20A TO220AC Rohm Semiconductor |
2,872 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 860pF @ 1V, 1MHz | 0 ns | 400 µA @ 600 V | 600 V | 20A | 175°C (Max) | 1.7 V @ 20 A | |
|
FFSD10120ASIC DIODE, 1200V, 10A, DPAK Rochester Electronics, LLC |
2,443 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
S3ARECTIFIER DIODE, 3A, 50V, DO-214 Rochester Electronics, LLC |
3,597 | - |
RFQ |
Datasheet |
Bulk | Alliance Plastics, S | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 1.5 µs | 5 µA @ 50 V | 50 V | 3A | -50°C ~ 150°C | 1.15 V @ 3 A |
|
BYV29-600,127DIODE GEN PURP 600V 9A TO220AC WeEn Semiconductors |
2,655 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 9A | 150°C (Max) | 1.25 V @ 8 A | |
|
HS2GA-F1-0000HFDIODE GEN PURP 400V 2A DO214AC Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,484 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 1700 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
1N2062DO9 275 AMP SILICON RECTIFIER Solid State Inc. |
2,458 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 75 µA @ 450 V | 450 V | 275A | -65°C ~ 190°C | 1.3 V @ 300 A | |
|
SCS108AGCDIODE SCHOTTKY 600V 8A TO220AC Rohm Semiconductor |
2,835 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 345pF @ 1V, 1MHz | 0 ns | 160 µA @ 600 V | 600 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
KE12DJ10T20SIC DIODE 1200V 10A TO-220-2 Caly Technologies |
2,803 | - |
RFQ |
Datasheet |
Tube | RoHS | - | Silicon Carbide Schottky | Active | Through Hole | 660pF @ 0.1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | |
|
US2DARECTIFIER DIODE, 1.5A, 200V, DO- Rochester Electronics, LLC |
3,509 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A |